FCMT199N60

FCMT199N60 — N-Channel SuperFET® II MOSFET August 2014 FCMT199N60 N-Channel SuperFET® II MOSFET 600 V, 20.2 A, 199 mΩ Features 650 V @ TJ = 150°C RDS(on) = 170 mΩ (Typ.) Ultra Low Gate Charge (Typ. Qg = 57 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 160 pF) 100% Avalanche Tested RoHS Compliant Applications Server and Telecom Power Supplies Solar Inverters Adaptors Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as server/telecom power, adaptor and solar inverter applications. The Power88 package is an ultra-slim surface-mount package (1 mm high) with a low profile and small footprint (8x8 mm2). SuperFET II MOSFET in a Power88 package offers excellent switching performance due to lower parasitic source inductance and separated power and drive sources. Power88 offers Moisture Sensitivity Level 1 (MSL 1). D S2 S2 S1 G Power88 Absolute Maximum Ratings TC = 25oC unless otherwise noted. G S1 S2 S1 : Driver Source S2 : Power Source Symbol Parameter VDSS VGSS Drain to Source Voltage Gate to Source Voltage -DC -AC (f > 1 Hz) ID IDM EAS ...