N-Channel MOSFET
FCP190N65F — N-Channel SuperFET® II FRFET® MOSFET
December 2014
FCP190N65F
N-Channel SuperFET® II FRFET® MOSFET
650 V,...
Description
FCP190N65F — N-Channel SuperFET® II FRFET® MOSFET
December 2014
FCP190N65F
N-Channel SuperFET® II FRFET® MOSFET
650 V, 20.6 A, 190 mΩ
Features
700 V @ TJ = 150°C Typ. RDS(on) = 168 mΩ Ultra Low Gate Charge (Typ. Qg = 60 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 304 pF) 100% Avalanche Tested RoHS Compliant
Applications
LCD / LED / PDP TV Solar Inverter AC - DC Power Supply
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
D
GDS TO-220
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol VDSS VGSS
ID IDM EAS IAR EAR dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Drain Current
- DC
- AC - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery ...
Similar Datasheet