FDB024N08BL7

FDB024N08BL7 N-Channel PowerTrench® MOSFET June 2014 FDB024N08BL7 N-Channel PowerTrench® MOSFET 80 V, 229 A, 2.4 mΩ Features RDS(on) = 1.7 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A Low FOM RDS(on) *QG Low Reverse Recovery Charge, Qrr = 112 nC Soft Reverse Recovery Body Diode Enables Highly Efficiency in Synchronous Rectification Fast Switching Speed RoHS Compliant Qualified according to JEDEC Standards JESD22-A113F and IPC/JEDEC J-STD-020D.1 Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Motor drives and Uninterruptible Power Supplies 123 567 4 D2-PAK (TO-263) 1. Gate 2. Source 3. Source 4. Drain 5. Source 6. Source 7. Source D(Pin4, tab) G (Pin1) S(Pin2,3,5,6,7) MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol Parameter FDB024N08BL7 VDSS VGSS ID IDM EAS dv/dt PD Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC, Silicon Limited) - Continuous (TC = 100oC, Silicon Limited) - Continuous (TC = 25oC, Package Limited) - Pulsed (Note 1) Single Pulsed Avalanche Energy (Note 2) Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate Above 25oC (Note 3) 80 ±20 229* 162* 120 916 917 6.0 246 1.64 TJ, TSTG TL Ope...