DatasheetsPDF.com

FDB86102LZ Dataheets PDF



Part Number FDB86102LZ
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description MOSFET
Datasheet FDB86102LZ DatasheetFDB86102LZ Datasheet (PDF)

FDB86102LZ N-Channel PowerTrench® MOSFET FDB86102LZ N-Channel PowerTrench® MOSFET 100 V, 30 A, 24 mΩ May 2011 Features General Description „ Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 8.3 A „ Max rDS(on) = 35 mΩ at VGS = 4.5 V, ID = 6.8 A „ HBM ESD protection level > 6 kV typical (Note 4) „ Very low Qg and Qgd compared to competing trench technologies „ Fast switching speed „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrenc.

  FDB86102LZ   FDB86102LZ


Document
FDB86102LZ N-Channel PowerTrench® MOSFET FDB86102LZ N-Channel PowerTrench® MOSFET 100 V, 30 A, 24 mΩ May 2011 Features General Description „ Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 8.3 A „ Max rDS(on) = 35 mΩ at VGS = 4.5 V, ID = 6.8 A „ HBM ESD protection level > 6 kV typical (Note 4) „ Very low Qg and Qgd compared to competing trench technologies „ Fast switching speed „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level. Applications „ DC-DC conversion „ Inverter „ Synchronous Rectifier D D G S TO-263AB FDB Series G S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous(Package limited) TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C (Note 1a) -Pulsed Single Pulse Avalanche Energy (Note 3) Power Dissipation TA = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) Thermal Characteristics Ratings 100 ±20 30 40 8.3 50 121 3.1 2 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1) (Note 1a) 1.9 40 °C/W Device Marking FDB86102LZ Device FDB86102LZ Package TO-263AB Reel Size 330mm Tape Width 24 mm Quantity 800 units ©2011 Fairchild Semiconductor Corporation FDB86102LZ Rev.C1 1 www.fairchildsemi.com FDB86102LZ N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 μA, VGS = 0 V ID = 250 μA, referenced to 25 °C VDS = 80 V, VGS = 0 V VGS = ±20 V, VDS = 0 V 100 V 69 mV/°C 1 μA ±10 μA On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 1.0 1.5 3.0 V ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C -6 mV/°C VGS = 10 V, ID = 8.3 A 18 24 rDS(on) Static Drain to Source On Resistance VGS = 4.5 V, ID = 6.8 A 23 35 mΩ VGS = 10 V, ID = 8.3 A,TJ = 125 °C 31 42 gFS Forward Transconductance VDS = 5 V, ID = 8.3 A 29 S Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 50 V, VGS = 0 V, f = 1MHz 959 1275 181 240 9 13 0.4 pF pF pF Ω Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge VDD = 50 V, ID = 8.3 A, VGS = 10 V, RGEN = 6 Ω VGS = 0 V to 10 V VGS = 0 V to 4.5 V VDD = 50 V, ID = 8.3 A 6.6 13 2.1 10 18.2 33 2.3 10 15.2 21 7.6 11 2.4 2.5 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 8.3 A VGS = 0 V, IS = 2.4 A (Note 2) (Note 2) IF = 8.3 A, di/dt = 100 A/μs 0.8 1.3 0.7 1.2 V 42 67 ns 40 64 nC NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 40 °C/W when mounted on a 1 in2 pad of 2 oz copper b) 62.5 °C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %. 3. Starting TJ = 25 °C, L = 3 mH, IAS = 9 A, VDD = 100 V, VGS = 10 V. 4. The diode connected between gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ©2011 Fairchild Semiconductor Corporation FDB86102LZ Rev.C1 2 www.fairchildsemi.com FDB86102LZ N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted ID, DRAIN CURRENT (A) 40 VGS = 10 V VGS = 6 V 30 VGS = 4.5 V 20 VGS = 3.5 V VGS = 3 V 10 0 0 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0.5 1.0 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 2.0 Figure 1. On Region Characteristics NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 5 PULSE DURATION = 80 μs 4 DUTY CYCLE = 0.5% MAX VGS = 3 V 3 VGS = 3.5 V 2 1 VGS = 4.5 V VGS = 10 V 0 0 10 20 30 40 50 ID, DRAIN CURRENT (A) Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 2.2 2.0 ID = 8.3 A VGS = 10 V 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -75 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On Resistance vs Junction Temperature rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m.


FDB86563_F085 FDB86102LZ FDB86135


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)