Document
FDB86102LZ N-Channel PowerTrench® MOSFET
FDB86102LZ
N-Channel PowerTrench® MOSFET
100 V, 30 A, 24 mΩ
May 2011
Features
General Description
Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 8.3 A Max rDS(on) = 35 mΩ at VGS = 4.5 V, ID = 6.8 A HBM ESD protection level > 6 kV typical (Note 4) Very low Qg and Qgd compared to competing trench
technologies Fast switching speed 100% UIL Tested RoHS Compliant
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.
Applications
DC-DC conversion
Inverter
Synchronous Rectifier
D
D
G S
TO-263AB
FDB Series
G S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
ID
EAS PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous(Package limited)
TC = 25 °C
-Continuous (Silicon limited)
TC = 25 °C
-Continuous
TA = 25 °C (Note 1a)
-Pulsed
Single Pulse Avalanche Energy
(Note 3)
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
(Note 1a) (Note 1b)
Thermal Characteristics
Ratings 100 ±20 30 40 8.3 50 121 3.1 2
-55 to +150
Units V V
A
mJ W °C
RθJC RθJA
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1) (Note 1a)
1.9 40
°C/W
Device Marking FDB86102LZ
Device FDB86102LZ
Package TO-263AB
Reel Size 330mm
Tape Width 24 mm
Quantity 800 units
©2011 Fairchild Semiconductor Corporation FDB86102LZ Rev.C1
1
www.fairchildsemi.com
FDB86102LZ N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, referenced to 25 °C
VDS = 80 V, VGS = 0 V VGS = ±20 V, VDS = 0 V
100 V
69 mV/°C
1 μA ±10 μA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
1.0 1.5 3.0
V
ΔVGS(th) ΔTJ
Gate to Source Threshold Voltage Temperature Coefficient
ID = 250 μA, referenced to 25 °C
-6 mV/°C
VGS = 10 V, ID = 8.3 A
18 24
rDS(on)
Static Drain to Source On Resistance
VGS = 4.5 V, ID = 6.8 A
23 35 mΩ
VGS = 10 V, ID = 8.3 A,TJ = 125 °C
31 42
gFS Forward Transconductance
VDS = 5 V, ID = 8.3 A
29 S
Dynamic Characteristics
Ciss Coss Crss Rg
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
VDS = 50 V, VGS = 0 V, f = 1MHz
959 1275 181 240
9 13 0.4
pF pF pF Ω
Switching Characteristics
td(on) tr td(off) tf Qg(TOT) Qg(TOT) Qgs Qgd
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge
VDD = 50 V, ID = 8.3 A, VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V VGS = 0 V to 4.5 V VDD = 50 V,
ID = 8.3 A
6.6 13 2.1 10 18.2 33 2.3 10 15.2 21 7.6 11 2.4 2.5
ns ns ns ns nC nC nC nC
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge
VGS = 0 V, IS = 8.3 A VGS = 0 V, IS = 2.4 A
(Note 2) (Note 2)
IF = 8.3 A, di/dt = 100 A/μs
0.8 1.3 0.7 1.2
V
42 67 ns
40 64 nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 40 °C/W when mounted on a 1 in2 pad of 2 oz copper
b) 62.5 °C/W when mounted on a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. Starting TJ = 25 °C, L = 3 mH, IAS = 9 A, VDD = 100 V, VGS = 10 V. 4. The diode connected between gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
©2011 Fairchild Semiconductor Corporation FDB86102LZ Rev.C1
2
www.fairchildsemi.com
FDB86102LZ N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
ID, DRAIN CURRENT (A)
40 VGS = 10 V VGS = 6 V
30 VGS = 4.5 V
20
VGS = 3.5 V VGS = 3 V
10
0 0
PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX
0.5 1.0 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V)
2.0
Figure 1. On Region Characteristics
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
5 PULSE DURATION = 80 μs
4 DUTY CYCLE = 0.5% MAX VGS = 3 V
3 VGS = 3.5 V
2
1 VGS = 4.5 V VGS = 10 V
0 0 10 20 30 40 50 ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
2.2 2.0 ID = 8.3 A
VGS = 10 V 1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4 -75 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance vs Junction Temperature
rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m.