FDBL86366_F085

FDBL86366_F085 N-Channel PowerTrench® MOSFET FDBL86366_F085 N-Channel PowerTrench® MOSFET 80 V, 220 A, 3.0 mΩ April 2015 Features „ Typical RDS(on) = 2.4 mΩ at VGS = 10V, ID = 80 A „ Typical Qg(tot) = 86 nC at VGS = 10V, ID = 80 A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ PowerTrain Management „ Solenoid and Motor Drivers „ Integrated Starter/Alternator „ Primary Switch for 12V Systems D G S For current package drawing, please refer to the Fairchild web‐ site at http://www.fairchildsemi.com/dwg/PS/PSOF08A.pdf. MOSFET Maximum Ratings TJ = 25°C unless otherwise noted. Symbol Parameter VDSS VGS ID Drain-to-Source Voltage Gate-to-Source Voltage Drain Current - Continuous (VGS=10) (Note 1) Pulsed Drain Current EAS Single Pulse Avalanche Energy PD Power Dissipation Derate Above 25oC TJ, TSTG RθJC RθJA Operating and Storage Temperature Thermal Resistance, Junction to Case Maximum Thermal Resistance, Junction to Ambient TC = 25°C TC = 25°C (Note 2) (Note 3) Ratings 80 ±20 220 See Figure 4 205 300 2.0 -55 to + 175 0.5 43 Units V V A mJ W W/oC oC oC/W oC/W Notes: 1: Current is limited by silicon. 2: Starting TJ = 25°C, L = 0.1mH, IAS = 64A, VDD = 80V during inductor charging and VDD = 0V during time in avalanche. 3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface presented here is of the based drain...