Document
FDD10AN06A0_F085 N-Channel PowerTrench® MOSFET
FDD10AN06A0_F085
N-Channel PowerTrench® MOSFET 60V, 50A, 10.5mΩ
Features
• rDS(ON) = 9.4mΩ (Typ.), VGS = 10V, ID = 50A • Qg(tot) = 28nC (Typ.), VGS = 10V • Low Miller Charge • Low Qrr Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 • RoHS Compliant
Formerly developmental type 82560
Dec 2012
Applications
• Motor / Body Load Control • ABS Systems • Powertrain Management • Injection Systems • DC-DC converters and Off-line UPS • Distributed Power Architectures and VRMs • Primary Switch for 12V and 24V systems
DRAIN (FLANGE)
D
GATE SOURCE
G
TO-252AA
FDD SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS VGS
ID
EAS PD TJ, TSTG
Parameter Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (TC < 115oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 52oC/W) Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation Derate above 25oC
Operating and Storage Temperature
S
Thermal Characteristics
RθJC RθJA RθJA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
Ratings 60 ±20
50 11 Figure 4 429 135 0.9 -55 to 175
1.11 100 52
Units V V
A A A mJ W W/oC oC
oC/W oC/W oC/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2012 Fairchild Semiconductor Corporation
FDD10AN06A0_F085 Rev. C1
FDD10AN06A0_F085 N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information
Device Marking FDD10AN06A0
Device FDD10AN06A0_F085
Package TO-252AA
Reel Size 330mm
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
VDS = 50V VGS = 0V
TC = 150oC
VGS = ±20V
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
rDS(ON)
Drain to Source On Resistance
VGS = VDS, ID = 250µA ID = 50A, VGS = 10V ID = 50A, VGS = 10V, TJ = 175oC
Tape Width 16mm
Quantity 2500 units
Min Typ Max Units
60 - - V - -1
µA - - 250 - - ±100 nA
2 - 4V - 0.0094 0.0105
Ω - 0.020 0.023
Dynamic Characteristics
CISS COSS CRSS Qg(TOT) Qg(TH) Qgs Qgs2 Qgd
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain “Miller” Charge
Switching Characteristics (VGS = 10V)
tON td(ON) tr td(OFF) tf tOFF
Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time
Drain-Source Diode Characteristics
VSD Source to Drain Diode Voltage
trr QRR
Reverse Recovery Time Reverse Recovered Charge
Notes: 1: Starting TJ = 25°C, L = 8.58mH, IAS = 10A.
VDS = 25V, VGS = 0V, f = 1MHz
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 30V ID = 50A Ig = 1.0mA
VDD = 30V, ID = 50A VGS = 10V, RGS = 10Ω
ISD = 50A ISD = 25A ISD = 50A, dISD/dt = 100A/µs ISD = 50A, dISD/dt = 100A/µs
- 1840 -
pF
- 340 -
pF
- 110 -
pF
28 37 nC
- 3.5 4.6 nC
- 9.8 - nC
- 6.4 - nC
- 7.8 - nC
- - 131 ns - 8 - ns - 79 - ns - 32 - ns - 32 - ns - - 97 ns
-
-
1.25
V
- - 1.0 V
- - 27 ns
- - 23 nC
©2012 Fairchild Semiconductor Corporation
FDD10AN06A0_F085 Rev. C1
FDD10AN06A0_F085 N-Channel PowerTrench® MOSFET
Typical Characteristics TC = 25°C unless otherwise noted
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
1.2 80 CURRENT LIMITED BY PACKAGE
1.0
60 0.8
0.6 40
0.4 20
0.2
0 0 25 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC)
Figure 1. Normalized Power Dissipation vs Ambient Temperature
0 25
50 75 100 125 150 TC, CASE TEMPERATURE (oC)
175
Figure 2. Maximum Continuous Drain Current vs Case Temperature
ZθJC, NORMALIZED THERMAL IMPEDANCE
2 DUTY CYCLE - DESCENDING ORDER
1 0.5 0.2 0.1 0.05 0.02 0.01
0.1
0.01 10-5
SINGLE PULSE 10-4
PDM
t1
t2
NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC
10-3
10-2
10-1
t , RECTANGULAR PULSE DURATION (s)
100
Figure 3. Normalized Maximum Transient Thermal Impedance
101
1000
TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION
VGS = 10V 100
TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
175 - TC 150
IDM, PEAK CURRENT (A)
40
10-5
10-4
10-3
10-2
10-1
100
101
t , PULSE WIDTH (s)
Figure 4. Peak Current Capability
©2012 Fairchild Semiconductor Corporation
FDD10AN06A0_F085 Rev. C1
FDD10AN06A0_F085 N-Channel PowerTrench® MOSFET
Typical Characteristics TC = 25°C unless otherwise noted
ID,.