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FDD10AN06A0_F085 Dataheets PDF



Part Number FDD10AN06A0_F085
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description MOSFET
Datasheet FDD10AN06A0_F085 DatasheetFDD10AN06A0_F085 Datasheet (PDF)

FDD10AN06A0_F085 N-Channel PowerTrench® MOSFET FDD10AN06A0_F085 N-Channel PowerTrench® MOSFET 60V, 50A, 10.5mΩ Features • rDS(ON) = 9.4mΩ (Typ.), VGS = 10V, ID = 50A • Qg(tot) = 28nC (Typ.), VGS = 10V • Low Miller Charge • Low Qrr Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 • RoHS Compliant Formerly developmental type 82560 Dec 2012 Applications • Motor / Body Load Control • ABS Systems • Powertrain Management • Injection Systems • DC-DC converters a.

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FDD10AN06A0_F085 N-Channel PowerTrench® MOSFET FDD10AN06A0_F085 N-Channel PowerTrench® MOSFET 60V, 50A, 10.5mΩ Features • rDS(ON) = 9.4mΩ (Typ.), VGS = 10V, ID = 50A • Qg(tot) = 28nC (Typ.), VGS = 10V • Low Miller Charge • Low Qrr Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 • RoHS Compliant Formerly developmental type 82560 Dec 2012 Applications • Motor / Body Load Control • ABS Systems • Powertrain Management • Injection Systems • DC-DC converters and Off-line UPS • Distributed Power Architectures and VRMs • Primary Switch for 12V and 24V systems DRAIN (FLANGE) D GATE SOURCE G TO-252AA FDD SERIES MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC < 115oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 52oC/W) Pulsed Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature S Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area Ratings 60 ±20 50 11 Figure 4 429 135 0.9 -55 to 175 1.11 100 52 Units V V A A A mJ W W/oC oC oC/W oC/W oC/W This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2012 Fairchild Semiconductor Corporation FDD10AN06A0_F085 Rev. C1 FDD10AN06A0_F085 N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Device Marking FDD10AN06A0 Device FDD10AN06A0_F085 Package TO-252AA Reel Size 330mm Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 50V VGS = 0V TC = 150oC VGS = ±20V On Characteristics VGS(TH) Gate to Source Threshold Voltage rDS(ON) Drain to Source On Resistance VGS = VDS, ID = 250µA ID = 50A, VGS = 10V ID = 50A, VGS = 10V, TJ = 175oC Tape Width 16mm Quantity 2500 units Min Typ Max Units 60 - - V - -1 µA - - 250 - - ±100 nA 2 - 4V - 0.0094 0.0105 Ω - 0.020 0.023 Dynamic Characteristics CISS COSS CRSS Qg(TOT) Qg(TH) Qgs Qgs2 Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain “Miller” Charge Switching Characteristics (VGS = 10V) tON td(ON) tr td(OFF) tf tOFF Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr QRR Reverse Recovery Time Reverse Recovered Charge Notes: 1: Starting TJ = 25°C, L = 8.58mH, IAS = 10A. VDS = 25V, VGS = 0V, f = 1MHz VGS = 0V to 10V VGS = 0V to 2V VDD = 30V ID = 50A Ig = 1.0mA VDD = 30V, ID = 50A VGS = 10V, RGS = 10Ω ISD = 50A ISD = 25A ISD = 50A, dISD/dt = 100A/µs ISD = 50A, dISD/dt = 100A/µs - 1840 - pF - 340 - pF - 110 - pF 28 37 nC - 3.5 4.6 nC - 9.8 - nC - 6.4 - nC - 7.8 - nC - - 131 ns - 8 - ns - 79 - ns - 32 - ns - 32 - ns - - 97 ns - - 1.25 V - - 1.0 V - - 27 ns - - 23 nC ©2012 Fairchild Semiconductor Corporation FDD10AN06A0_F085 Rev. C1 FDD10AN06A0_F085 N-Channel PowerTrench® MOSFET Typical Characteristics TC = 25°C unless otherwise noted ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 80 CURRENT LIMITED BY PACKAGE 1.0 60 0.8 0.6 40 0.4 20 0.2 0 0 25 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC) Figure 1. Normalized Power Dissipation vs Ambient Temperature 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (oC) 175 Figure 2. Maximum Continuous Drain Current vs Case Temperature ZθJC, NORMALIZED THERMAL IMPEDANCE 2 DUTY CYCLE - DESCENDING ORDER 1 0.5 0.2 0.1 0.05 0.02 0.01 0.1 0.01 10-5 SINGLE PULSE 10-4 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC 10-3 10-2 10-1 t , RECTANGULAR PULSE DURATION (s) 100 Figure 3. Normalized Maximum Transient Thermal Impedance 101 1000 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION VGS = 10V 100 TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 175 - TC 150 IDM, PEAK CURRENT (A) 40 10-5 10-4 10-3 10-2 10-1 100 101 t , PULSE WIDTH (s) Figure 4. Peak Current Capability ©2012 Fairchild Semiconductor Corporation FDD10AN06A0_F085 Rev. C1 FDD10AN06A0_F085 N-Channel PowerTrench® MOSFET Typical Characteristics TC = 25°C unless otherwise noted ID,.


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