N-Channel MOSFET
FDD86102LZ N-Channel Shielded Gate PowerTrench® MOSFET
March 2015
FDD86102LZ
N-Channel Shielded Gate PowerTrench® MOSF...
Description
FDD86102LZ N-Channel Shielded Gate PowerTrench® MOSFET
March 2015
FDD86102LZ
N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 35 A, 22.5 mΩ
Features
General Description
Shielded Gate MOSFET Technology Max rDS(on) = 22.5 mΩ at VGS = 10 V, ID = 8 A Max rDS(on) = 31 mΩ at VGS = 4.5 V, ID = 7 A HBM ESD protection level > 6 kV typical (Note 4) Very low Qg and Qgd compared to competing trench
technologies Fast switching speed 100% UIL tested RoHS Compliant
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.
Applications
DC - DC Conversion
Inverter
Synchronous Rectifier
D
D G
S DTO-P-2A5K2 (TO-252)
G S
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Symbol VDS VGS
ID
EAS PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous -Continuous -Pulsed
TC = 25 °C TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a) (Note 3)
(Note 1a)
Ratings 100 ±20 35 8 40 84 54 3.1
-55 to +150
Units V V
A
mJ W °C
RθJC RθJA
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
2.3
(Note 1a)
40
...
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