Document
FDD86110 N-Channel Shielded Gate PowerTrench® MOSFET
March 2015
FDD86110
N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 50 A, 10.2 mΩ
Features
General Description
Shielded Gate MOSFET Technology Max rDS(on) = 10.2 mΩ at VGS = 10 V, ID = 12.5 A Max rDS(on) = 16 mΩ at VGS = 6 V, ID = 9.8 A 100% UIL tested
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that
incorporates Shielded Gate technology. This process has been
optimized for the on-state resistance and yet maintain superior
switching performance.
RoHS Compliant
Application
DC - DC Conversion
D
G S
D
DT O-P-2A5K2 (T O -25 2)
G S
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Symbol VDS VGS
ID
EAS PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous -Continuous -Pulsed
TC = 25 °C TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a) (Note 4) (Note 3)
(Note 1a)
Ratings 100 ±20 50 12.5 150 135 127 3.1
-55 to +150
Units V V
A
mJ W °C
RθJC RθJA
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
0.98
(Note 1a)
40
°C/W
Device Marking FDD86110
Device FDD86110
Package D-PAK(TO-252)
Reel Size 13 ’’
Tape Width 16 mm
Quantity 2500 units
©2012 Fairchild Semiconductor Corporation
1
FDD86110 Rev.1.2
www.fairchildsemi.com
FDD86110 N-Channel Shielded Gate PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V
100
ID = 250 μA, referenced to 25 °C
VDS = 80 V, VGS = 0 V VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
ΔVGS(th) ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
VGS = VDS, ID = 250 μA
2
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 12.5 A VGS = 6 V, ID = 9.8 A VGS = 10 V, ID = 12.5 A,TJ = 125°C VDS = 10 V, ID = 12.5 A
Dynamic Characteristics
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
VDS = 50 V, VGS = 0 V, f = 1MHz
Rg
Gate Resistance
0.1
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge
VDD = 50 V, ID = 12.5 A, VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V VDD = 50 V, ID = 12.5 A
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 12.5 A VGS = 0 V, IS = 2.6 A
(.