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FDD86540 Dataheets PDF



Part Number FDD86540
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDD86540 DatasheetFDD86540 Datasheet (PDF)

FDD86540 N-Channel PowerTrench® MOSFET FDD86540 N-Channel PowerTrench® MOSFET 60 V, 136 A, 4.1 mΩ March 2015 Features General Description „ Max rDS(on) = 4.1 mΩ at VGS = 10 V, ID = 21.5 A „ Max rDS(on) = 5 mΩ at VGS = 8 V, ID = 19.5 A „ 100% UIL tested „ RoHS Compliant This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been op.

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FDD86540 N-Channel PowerTrench® MOSFET FDD86540 N-Channel PowerTrench® MOSFET 60 V, 136 A, 4.1 mΩ March 2015 Features General Description „ Max rDS(on) = 4.1 mΩ at VGS = 10 V, ID = 21.5 A „ Max rDS(on) = 5 mΩ at VGS = 8 V, ID = 19.5 A „ 100% UIL tested „ RoHS Compliant This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. Applications „ Primary Switch in isolated DC-DC „ Synchronous Rectifier „ Load Switch D D G S DT O-P-2A5K2 (T O -25 2) G S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Continuous -Pulsed TC = 25 °C TC = 100 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 5) (Note 5) (Note 1a) (Note 4) (Note 3) (Note 1a) Ratings 60 ±20 136 86 21.5 240 228 127 3.1 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information 0.98 (Note 1a) 40 °C/W Device Marking FDD86540 Device FDD86540 Package D-PAK(TO-252) Reel Size 13 ’’ Tape Width 16 mm Quantity 2500 units ©2012 Fairchild Semiconductor Corporation 1 FDD86540 Rev. 1.2 www.fairchildsemi.com FDD86540 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 60 ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V On Characteristics VGS(th) ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance VGS = VDS, ID = 250 μA 2 ID = 250 μA, referenced to 25 °C VGS = 10 V, ID = 21.5 A VGS = 8 V, ID = 19.5 A VGS = 10 V, ID = 21.5 A, TJ = 125 °C VDS = 10 V, ID = 21.5 A Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 30 V, VGS = 0 V, f = 1 MHz Switching Characteristics td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge VDD = 30 V, ID = 21.5 A, VGS = 10 V, RGEN = 6 Ω VGS = 0 V to 10 V VGS = 0 V to 8 V VDD = 30 V, ID = 21.5 A Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 21.5 A VGS = 0 V, IS = 2.6 A (Note 2) (Note 2) IF = 21.5 A, di/dt = 100 A/μs Typ 28 3.1 -11 3.4 4.1 5.2 75 4767 1409 48 0.6 26 15 31 6.9 65 54 23 12 0.8 0.7 56 43 Max Units 1 ±100 V mV/°C μA nA 4 V mV/°C 4.1 5 mΩ 6.3 S 6340 pF 1880 pF 90 pF Ω 42 ns 28 ns 49 ns 14 ns 90 nC 75 nC nC nC 1.3 V 1.2 V 90 ns 69 nC Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJA is determined by the user’s board design. a) 40 °C/W when mounted on a 1 in2 pad of 2 oz copper b) 96 °C/W when mounted on a minimum pad 2: Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3: Starting TJ = 25 °C, L = 0.3 mH, IAS = 39 A, VDD = 54 V, VGS = 10 V. 4: Pulsed Id please refer to Fig 11 SOA graph for more details. 5: Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design. ©2012 Fairchild Semiconductor Corporation 2 FDD86540 Rev. 1.2 www.fairchildsemi.com FDD86540 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted ID, DRAIN CURRENT (A) 120 VGS = 10 V VGS = 8 V 90 60 30 VGS = 6 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS = 5.5 V VGS = 5 V 0 0 1 2 3 4 5 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 8 VGS = 5 V 6 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS = 5.5 V 4 VGS = 6 V 2 VGS = 8 V VGS = 10 V 0 0 30 60 90 120 ID, DRAIN CURRENT (A) Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -7.


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