Document
FDD86540 N-Channel PowerTrench® MOSFET
FDD86540
N-Channel PowerTrench® MOSFET
60 V, 136 A, 4.1 mΩ
March 2015
Features
General Description
Max rDS(on) = 4.1 mΩ at VGS = 10 V, ID = 21.5 A Max rDS(on) = 5 mΩ at VGS = 8 V, ID = 19.5 A 100% UIL tested RoHS Compliant
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
Applications
Primary Switch in isolated DC-DC Synchronous Rectifier Load Switch
D
D G
S DT O-P-2A5K2
(T O -25 2)
G S
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Symbol VDS VGS
ID
EAS PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous -Continuous -Continuous -Pulsed
TC = 25 °C TC = 100 °C TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 5) (Note 5) (Note 1a) (Note 4) (Note 3)
(Note 1a)
Ratings 60 ±20 136 86 21.5 240 228 127 3.1
-55 to +150
Units V V
A
mJ W °C
RθJC RθJA
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
0.98
(Note 1a)
40
°C/W
Device Marking FDD86540
Device FDD86540
Package D-PAK(TO-252)
Reel Size 13 ’’
Tape Width 16 mm
Quantity 2500 units
©2012 Fairchild Semiconductor Corporation
1
FDD86540 Rev. 1.2
www.fairchildsemi.com
FDD86540 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
60
ΔBVDSS ΔTJ
Breakdown Voltage Temperature Coefficient
ID = 250 μA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 48 V, VGS = 0 V
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
ΔVGS(th) ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
VGS = VDS, ID = 250 μA
2
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 21.5 A VGS = 8 V, ID = 19.5 A VGS = 10 V, ID = 21.5 A, TJ = 125 °C VDS = 10 V, ID = 21.5 A
Dynamic Characteristics
Ciss Coss Crss Rg
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
VDS = 30 V, VGS = 0 V, f = 1 MHz
Switching Characteristics
td(on) tr td(off) tf Qg Qg Qgs Qgd
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge
VDD = 30 V, ID = 21.5 A, VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V VGS = 0 V to 8 V
VDD = 30 V, ID = 21.5 A
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 21.5 A VGS = 0 V, IS = 2.6 A
(Note 2) (Note 2)
IF = 21.5 A, di/dt = 100 A/μs
Typ
28
3.1 -11 3.4 4.1 5.2 75
4767 1409
48 0.6
26 15 31 6.9 65 54 23 12
0.8 0.7 56 43
Max Units
1 ±100
V mV/°C
μA nA
4
V
mV/°C
4.1
5
mΩ
6.3
S
6340 pF
1880 pF
90
pF
Ω
42
ns
28
ns
49
ns
14
ns
90
nC
75
nC
nC
nC
1.3
V
1.2
V
90
ns
69
nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJA is determined by the user’s board design.
a) 40 °C/W when mounted on a 1 in2 pad of 2 oz copper
b) 96 °C/W when mounted on a minimum pad
2: Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3: Starting TJ = 25 °C, L = 0.3 mH, IAS = 39 A, VDD = 54 V, VGS = 10 V. 4: Pulsed Id please refer to Fig 11 SOA graph for more details.
5: Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.
©2012 Fairchild Semiconductor Corporation
2
FDD86540 Rev. 1.2
www.fairchildsemi.com
FDD86540 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
ID, DRAIN CURRENT (A)
120 VGS = 10 V VGS = 8 V
90
60
30
VGS = 6 V
PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX
VGS = 5.5 V
VGS = 5 V
0
0
1
2
3
4
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
8
VGS = 5 V 6
PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX
VGS = 5.5 V 4
VGS = 6 V
2 VGS = 8 V
VGS = 10 V
0
0
30
60
90
120
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7
-7.