MOSFET
FDD86369_F085 N-Channel PowerTrench® MOSFET
FDD86369_F085
N-Channel PowerTrench® MOSFET
80 V, 90 A, 7.9 mΩ
May 2015
F...
Description
FDD86369_F085 N-Channel PowerTrench® MOSFET
FDD86369_F085
N-Channel PowerTrench® MOSFET
80 V, 90 A, 7.9 mΩ
May 2015
Features
Typical RDS(on) = 5.9 mΩ at VGS = 10V, ID = 80 A Typical Qg(tot) = 34 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101
Applications
Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/Alternator Primary Switch for 12V Systems
D
D G
G S
DTO-P-2A5K2 (TO-252)
S
For current package drawing, please refer to the Fairchild web‐ site at http://www.fairchildsemi.com/package‐drawings/ TO/TO252A03.pdf
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
Symbol
Parameter
VDSS VGS
ID
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current - Continuous (VGS=10) (Note 1) Pulsed Drain Current
EAS Single Pulse Avalanche Energy
PD
Power Dissipation Derate Above 25oC
TJ, TSTG RθJC RθJA
Operating and Storage Temperature Thermal Resistance, Junction to Case Maximum Thermal Resistance, Junction to Ambient
TC = 25°C TC = 25°C
(Note 2)
(Note 3)
Ratings 80 ±20 90
See Figure 4 29 150 1.0
-55 to + 175 1.0 52
Units V V
A
mJ W W/oC oC oC/W oC/W
Notes:
1: Current is limited by bondwire configuration.
2: Starting TJ = 25°C, L = 14μH, IAS = 64A, VDD = 80V during inductor charging and VDD = 0V during time in avalanche.
3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
moun...
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