Document
FDD9407_F085 N-Channel Power Trench® MOSFET
FDD9407_F085
N-Channel Power Trench® MOSFET
40V, 100A, 2.0mΩ
Features
Typ rDS(on) = 1.6mΩ at VGS = 10V, ID = 80A Typ Qg(tot) = 86nC at VGS = 10V, ID = 80A UIS Capability RoHS Compliant Qualified to AEC Q101
Applications
Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Steering Integrated Starter/alternator Distributed Power Architectures and VRM Primary Switch for 12V Systems
G S
August 2013
D G
DTO-P-2A5K2 (TO-252)
D S
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted
Symbol
Parameter
VDSS VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous (VGS=10) (Note 1) Pulsed Drain Current
EAS Single Pulse Avalanche Energy
PD
Power Dissipation Derate above 25oC
TJ, TSTG RθJC RθJA
Operating and Storage Temperature Thermal Resistance Junction to Case Maximum Thermal Resistance Junction to Ambient
TC = 25°C TC = 25°C
(Note 2)
(Note 3)
Ratings 40 ±20 100
See Figure4 171 227 1.52
-55 to + 175 0.66 52
Units V V
A
mJ W W/oC oC oC/W oC/W
Package Marking and Ordering Information
Device Marking
Device
Package
FDD9407
FDD9407_F085 D-PAK(TO-252)
Reel Size 13”
Tape Width 12mm
Quantity 2500 units
Notes: 1: Current is limited by bondwire configuration.
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©2013 Fairchild Semiconductor Corporation FDD9407_F085_F085 Rev. C1
1
www.fairchildsemi.com
FDD9407_F085 N-Channel Power Trench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Off Characteristics
Test Conditions
Min
BVDSS Drain to Source Breakdown Voltage
IDSS Drain to Source Leakage Current
IGSS
Gate to Source Leakage Current
On Characteristics
ID = 250μA, VGS = 0V
VDS=40V, TJ = 25oC
VGS = 0V
TJ = 175oC(Note 4)
VGS = ±20V
40 -
VGS(th) rDS(on)
Gate to Source Threshold Voltage Drain to Source On Resistance
Dynamic Characteristics
VGS = VDS, ID = 250μA
ID = 80A,
TJ = 25oC
VGS= 10V TJ = 175oC(Note 4)
2.0 -
Ciss Coss Crss Rg Qg(ToT) Qg(th) Qgs Qgd
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate to Drain “Miller“ Charge
VDS = 25V, VGS = 0V, f = 1MHz
f = 1MHz
VGS = 0 to 10V VGS = 0 to 2V
VDD = 32V ID = 80A
-
Typ
-
3.1 1.6 2.64
6390 1580
95 2.3 86 12 30 15
Max Units
1 1 ±100
V μA mA nA
4.0 V 2 mΩ 3.22 mΩ
112 15.6 -
pF pF pF
Ω nC nC nC nC
Switching Characteristics
ton td(on) tr td(off) tf toff
Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time
Drain-Source Diode Characteristics
VDD = 20V, ID = 80A, VGS = 10V, RGEN = 6Ω
VSD Source to Drain Diode Voltage
Trr Reverse Recovery Time Qrr Reverse Recovery Charge
ISD = 80A, VGS = 0V ISD = 40A, VGS = 0V
IF = 80A, dISD/dt = 100A/μs, VDD=32V
Notes: 4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production.
-
-
- 120 ns 27 - ns 48 - ns 42 - ns 18 - ns - 97 ns
- 1.25 V - 1.2 V 58 88 ns 83 143 nC
FDD9407_F085 Rev. C1
2
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FDD9407_F085 N-Channel Power Trench® MOSFET
Typical Characteristics
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
1.2 300
CURRENT LIMITED
VGS = 10V
1.0 250 BY PACKAGE
0.8 200 CURRENT LIMITED BY SILICON
0.6 150
0.4 100
0.2 50
0.0 0
25 50 75 100 125 150 175 TC, CASE TEMPERATURE(oC)
Figure 1. Normalized Power Dissipation vs Case Temperature
2
DUTY CYCLE - DESCENDING ORDER 1
D = 0.50 0.20 0.10 0.05 0.02
0.1 0.01
NORMALIZED THERMAL IMPEDANCE, ZθJC
SINGLE PULSE
0 25
50 75 100 125 150 175 200 TC, CASE TEMPERATURE(oC)
Figure 2. Maximum Continuous Drain Current vs Case Temperature
PDM
t1 t2
NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TC
0.01 10-5
10-4 10-3 10-2 10-1 100 t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
101
1000
VGS = 10V
IDM, PEAK CURRENT (A)
100
10
SINGLE PULSE
1
10-5
10-4
TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I2
175 - TC 150
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
FDD9407_F085 Rev. C1
3
www.fairchildsemi.com
FDD9407_F085 N-Channel Power Trench® MOSFET
Typical Characteristics
ID, DRAIN CURRENT (A)
1000
100
100us 10
OPERATION IN THIS AREA MAY BE
1 LIMITED BY rDS(on) SINGLE PULSE
TJ = MAX RATED
1ms
10ms 100ms
TC = 25oC
0.1
1 10 100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
1000
If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln.