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FDD9407_F085 Dataheets PDF



Part Number FDD9407_F085
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description MOSFET
Datasheet FDD9407_F085 DatasheetFDD9407_F085 Datasheet (PDF)

FDD9407_F085 N-Channel Power Trench® MOSFET FDD9407_F085 N-Channel Power Trench® MOSFET 40V, 100A, 2.0mΩ Features „ Typ rDS(on) = 1.6mΩ at VGS = 10V, ID = 80A „ Typ Qg(tot) = 86nC at VGS = 10V, ID = 80A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ Powertrain Management „ Solenoid and Motor Drivers „ Electronic Steering „ Integrated Starter/alternator „ Distributed Power Architectures and VRM „ Primary Switch for 12V Systems G S August 2.

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FDD9407_F085 N-Channel Power Trench® MOSFET FDD9407_F085 N-Channel Power Trench® MOSFET 40V, 100A, 2.0mΩ Features „ Typ rDS(on) = 1.6mΩ at VGS = 10V, ID = 80A „ Typ Qg(tot) = 86nC at VGS = 10V, ID = 80A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ Powertrain Management „ Solenoid and Motor Drivers „ Electronic Steering „ Integrated Starter/alternator „ Distributed Power Architectures and VRM „ Primary Switch for 12V Systems G S August 2013 D G DTO-P-2A5K2 (TO-252) D S MOSFET Maximum Ratings TJ = 25°C unless otherwise noted Symbol Parameter VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous (VGS=10) (Note 1) Pulsed Drain Current EAS Single Pulse Avalanche Energy PD Power Dissipation Derate above 25oC TJ, TSTG RθJC RθJA Operating and Storage Temperature Thermal Resistance Junction to Case Maximum Thermal Resistance Junction to Ambient TC = 25°C TC = 25°C (Note 2) (Note 3) Ratings 40 ±20 100 See Figure4 171 227 1.52 -55 to + 175 0.66 52 Units V V A mJ W W/oC oC oC/W oC/W Package Marking and Ordering Information Device Marking Device Package FDD9407 FDD9407_F085 D-PAK(TO-252) Reel Size 13” Tape Width 12mm Quantity 2500 units Notes: 1: Current is limited by bondwire configuration. 32pm:r:oeRuSsnetθatnJirntAteigndisgshutTherJferae=csieu2sm5ob°faCotshf,eetLhdde=orjan0ui.nnm0c8potimiuonnnsHt-.i,tnoRIgA-cθSoaJn=sCea6is4a1Angidu,naV2craDpasDanedt=e-toeo4fd-0a2Vbmoyzdbducieeroinsnptiggptnehinrew.drmhuicaletlorRrecθshJisAatriasgnidnceegtewarnhmdeirnVeeDtdDhbe=yc0tahVseedutuhsreeinrrg'ms tabimloraeerfdienrdeaenvscaieglanins.cdhTeehfeinmedaxaismtuhme sroaltdinegr ©2013 Fairchild Semiconductor Corporation FDD9407_F085_F085 Rev. C1 1 www.fairchildsemi.com FDD9407_F085 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Off Characteristics Test Conditions Min BVDSS Drain to Source Breakdown Voltage IDSS Drain to Source Leakage Current IGSS Gate to Source Leakage Current On Characteristics ID = 250μA, VGS = 0V VDS=40V, TJ = 25oC VGS = 0V TJ = 175oC(Note 4) VGS = ±20V 40 - VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance Dynamic Characteristics VGS = VDS, ID = 250μA ID = 80A, TJ = 25oC VGS= 10V TJ = 175oC(Note 4) 2.0 - Ciss Coss Crss Rg Qg(ToT) Qg(th) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate to Drain “Miller“ Charge VDS = 25V, VGS = 0V, f = 1MHz f = 1MHz VGS = 0 to 10V VGS = 0 to 2V VDD = 32V ID = 80A - Typ - 3.1 1.6 2.64 6390 1580 95 2.3 86 12 30 15 Max Units 1 1 ±100 V μA mA nA 4.0 V 2 mΩ 3.22 mΩ 112 15.6 - pF pF pF Ω nC nC nC nC Switching Characteristics ton td(on) tr td(off) tf toff Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Drain-Source Diode Characteristics VDD = 20V, ID = 80A, VGS = 10V, RGEN = 6Ω VSD Source to Drain Diode Voltage Trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 80A, VGS = 0V ISD = 40A, VGS = 0V IF = 80A, dISD/dt = 100A/μs, VDD=32V Notes: 4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production. - - - 120 ns 27 - ns 48 - ns 42 - ns 18 - ns - 97 ns - 1.25 V - 1.2 V 58 88 ns 83 143 nC FDD9407_F085 Rev. C1 2 www.fairchildsemi.com FDD9407_F085 N-Channel Power Trench® MOSFET Typical Characteristics ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 300 CURRENT LIMITED VGS = 10V 1.0 250 BY PACKAGE 0.8 200 CURRENT LIMITED BY SILICON 0.6 150 0.4 100 0.2 50 0.0 0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE(oC) Figure 1. Normalized Power Dissipation vs Case Temperature 2 DUTY CYCLE - DESCENDING ORDER 1 D = 0.50 0.20 0.10 0.05 0.02 0.1 0.01 NORMALIZED THERMAL IMPEDANCE, ZθJC SINGLE PULSE 0 25 50 75 100 125 150 175 200 TC, CASE TEMPERATURE(oC) Figure 2. Maximum Continuous Drain Current vs Case Temperature PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TC 0.01 10-5 10-4 10-3 10-2 10-1 100 t, RECTANGULAR PULSE DURATION(s) Figure 3. Normalized Maximum Transient Thermal Impedance 101 1000 VGS = 10V IDM, PEAK CURRENT (A) 100 10 SINGLE PULSE 1 10-5 10-4 TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I2 175 - TC 150 10-3 10-2 10-1 100 101 t, RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability FDD9407_F085 Rev. C1 3 www.fairchildsemi.com FDD9407_F085 N-Channel Power Trench® MOSFET Typical Characteristics ID, DRAIN CURRENT (A) 1000 100 100us 10 OPERATION IN THIS AREA MAY BE 1 LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED 1ms 10ms 100ms TC = 25oC 0.1 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 5. Forward Bias Safe Operating Area 1000 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln.


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