FDD9409_F085

FDD9409_F085 N-Channel PowerTrench® MOSFET May 2014 FDD9409_F085 N-Channel PowerTrench® MOSFET 40 V, 90 A, 3.2 mΩ D Features „ Typ RDS(on) = 2.3mΩ at VGS = 10V, ID = 80A „ Typ Qg(tot) = 42nC at VGS = 10V, ID = 80A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ Powertrain Management „ Solenoid and Motor Drivers „ Electronic Steering „ Integrated Starter/Alternator „ Distributed Power Architectures and VRM „ Primary Switch for 12V Systems D G G S DTO-P-2A5K2 (TO-252) S For current package drawing, please refer to the Fairchild  website at www.fairchildsemi.com/packaging MOSFET Maximum Ratings TJ = 25°C unless otherwise noted. Symbol Parameter VDSS VGS ID Drain-to-Source Voltage Gate-to-Source Voltage Drain Current - Continuous (VGS=10) (Note 1) Pulsed Drain Current EAS Single-Pulse Avalanche Energy PD Power Dissipation Derate Above 25oC TJ, TSTG RθJC RθJA Operating and Storage Temperature Thermal Resistance, Junction to Case Maximum Thermal Resistance, Junction to Ambient TC = 25°C TC = 25°C (Note 2) (Note 3) Ratings 40 ±20 90 See Figure 4 101 150 1 -55 to + 175 1 52 Units V V A mJ W W/oC oC oC/W oC/W Package Marking and Ordering Information Device Marking Device Package FDD9409 FDD9409_F085 D-PAK(TO-252) Reel Size 13” Tape Width 12mm Quantity 2500 units Notes: 1: Current is limited by bondwire configuration. 2: 3: rmRSatoθtaiJunrAtngintiipsgnrgteThsJseeu=nsruft2aem5cd°eCohfoe, tfrLheteh=isej...