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FDMS9410_F085 Dataheets PDF



Part Number FDMS9410_F085
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description MOSFET
Datasheet FDMS9410_F085 DatasheetFDMS9410_F085 Datasheet (PDF)

FDMS9410_F085 N-Channel PowerTrench® MOSFET FDMS9410_F085 N-Channel PowerTrench® MOSFET 40 V, 50 A, 4.4 mΩ August 2015 Features „ Typical RDS(on) = 3.7 mΩ at VGS = 10V, ID = 50 A „ Typical Qg(tot) = 24 nC at VGS = 10V, ID = 50 A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ PowerTrain Management „ Solenoid and Motor Drivers „ Electronic Steering „ Integrated Starter/Alternator „ Distributed Power Architectures and VRM „ Primary Switch for.

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FDMS9410_F085 N-Channel PowerTrench® MOSFET FDMS9410_F085 N-Channel PowerTrench® MOSFET 40 V, 50 A, 4.4 mΩ August 2015 Features „ Typical RDS(on) = 3.7 mΩ at VGS = 10V, ID = 50 A „ Typical Qg(tot) = 24 nC at VGS = 10V, ID = 50 A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ PowerTrain Management „ Solenoid and Motor Drivers „ Electronic Steering „ Integrated Starter/Alternator „ Distributed Power Architectures and VRM „ Primary Switch for 12V Systems For current package drawing, please refer to the Fairchild web‐ site  at  https://www.fairchildsemi.com/package‐drawings/PQ/ PQFN08M.pdf MOSFET Maximum Ratings TJ = 25°C unless otherwise noted. Symbol Parameter VDSS VGS ID Drain-to-Source Voltage Gate-to-Source Voltage Drain Current - Continuous (VGS=10) (Note 1) Pulsed Drain Current EAS Single Pulse Avalanche Energy PD Power Dissipation Derate Above 25oC TJ, TSTG RθJC RθJA Operating and Storage Temperature Thermal Resistance, Junction to Case Maximum Thermal Resistance, Junction to Ambient TC = 25°C TC = 25°C (Note 2) (Note 3) Ratings 40 ±20 50 See Figure 4 39 75 0.5 -55 to + 175 2 50 Units V V A mJ W W/oC oC oC/W oC/W Notes: 1: Current is limited by bondwire configuration. 2: Starting TJ = 25°C, L = 0.1mH, IAS = 28A, VDD = 40V during inductor charging and VDD = 0V during time in avalanche. 3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface presented here is of the based drain pins. RθJC is on mounting on a 1 guaranteed by design, in2 pad of 2oz copper. while RθJAis determined by the board design. The maximum rating Package Marking and Ordering Information Device Marking FDMS9410 Device FDMS9410_F085 Package Power56 Reel Size 13” Tape Width 12mm Quantity 3000units ©2015 Fairchild Semiconductor Corporation FDMS9410_F085 Rev. 1.0 1 www.fairchildsemi.com FDMS9410_F085 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted. Symbol Parameter Off Characteristics Test Conditions Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Leakage Current On Characteristics ID = 250μA, VGS = 0V VDS=40V, TJ = 25oC VGS = 0V TJ = 175oC (Note 4) VGS = ±20V 40 - - -V - 1 μA - 1 mA - ±100 nA VGS(th) RDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance Dynamic Characteristics VGS = VDS, ID = 250μA 2.0 3.2 4.0 V ID = 50A, TJ = 25oC - 3.7 4.4 mΩ VGS= 10V TJ = 175oC (Note 4) - 6.6 7.9 mΩ Ciss Coss Crss Rg Qg(ToT) Qg(th) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Threshold Gate Charge Gate-to-Source Gate Charge Gate-to-Drain “Miller“ Charge Switching Characteristics VDS = 20V, VGS = 0V, f = 1MHz f = 1MHz VGS = 0 to 10V VGS = 0 to 2V VDD = 32V ID = 50A - 1790 - - 620 - - 32 - - 2.0 - - 24 36 - 3.3 - - 9.1 - - 4.5 - pF pF pF Ω nC nC nC nC ton td(on) tr td(off) tf toff Turn-On Time Turn-On Delay Rise Time Turn-Off Delay Fall Time Turn-Off Time Drain-Source Diode Characteristics VDD = 20V, ID = 50A, VGS = 10V, RGEN = 6Ω - - 27 ns - 12.1 - ns - 5.9 - ns - 18.8 - ns - 5.0 - ns - - 31 ns VSD Source-to-Drain Diode Voltage trr Reverse-Recovery Time Qrr Reverse-Recovery Charge ISD =50A, VGS = 0V ISD = 25A, VGS = 0V IF = 50A, dISD/dt = 100A/μs VDD = 32V --- 45.5 - 33.2 Note: 4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production. 1.25 1.2 59 43 V V ns nC ©2015 Fairchild Semiconductor Corporation FDMS9410_F085 Rev. 1.0 2 www.fairchildsemi.com FDMS9410_F085 N-Channel PowerTrench® MOSFET Typical Characteristics POWER DISSIPATION MULTIPLIER 1.2 100 1.0 CURRENT LIMITED BY PACKAGE VGS = 10V 80 ID, DRAIN CURRENT (A) 0.8 60 0.6 40 0.4 0.2 20 0.0 0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE(oC) Figure 1. Normalized Power Dissipation vs. Case Temperature 2 DUTY CYCLE - DESCENDING ORDER 1 D = 0.50 0.20 0.10 0.05 0.02 0.1 0.01 NORMALIZED THERMAL IMPEDANCE, ZθJC SINGLE PULSE 0 25 50 75 100 125 150 175 200 TC, CASE TEMPERATURE(oC) Figure 2. Maximum Continuous Drain Current vs. Case Temperature PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC 0.01 10-5 10-4 10-3 10-2 10-1 100 t, RECTANGULAR PULSE DURATION(s) Figure 3. Normalized Maximum Transient Thermal Impedance 101 1000 VGS = 10V 100 TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I2 175 - TC 150 IDM, PEAK CURRENT (A) SINGLE PULSE 10 10-5 10-4 10-3 10-2 10-1 100 101 t, RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability ©2015 Fairchild Semiconductor Corporation FDMS9410_F085 Rev. 1.0 3 www.fairchildsemi.com FDMS9410_F085 N-Channel PowerTrench® MOSFET Typical Characteristics ID, DRAIN CURRE.


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