Document
FDMS9410_F085 N-Channel PowerTrench® MOSFET
FDMS9410_F085
N-Channel PowerTrench® MOSFET
40 V, 50 A, 4.4 mΩ
August 2015
Features
Typical RDS(on) = 3.7 mΩ at VGS = 10V, ID = 50 A Typical Qg(tot) = 24 nC at VGS = 10V, ID = 50 A UIS Capability RoHS Compliant Qualified to AEC Q101
Applications
Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Electronic Steering Integrated Starter/Alternator Distributed Power Architectures and VRM Primary Switch for 12V Systems
For current package drawing, please refer to the Fairchild web‐ site at https://www.fairchildsemi.com/package‐drawings/PQ/ PQFN08M.pdf
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
Symbol
Parameter
VDSS VGS
ID
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current - Continuous (VGS=10) (Note 1) Pulsed Drain Current
EAS Single Pulse Avalanche Energy
PD
Power Dissipation Derate Above 25oC
TJ, TSTG RθJC RθJA
Operating and Storage Temperature Thermal Resistance, Junction to Case Maximum Thermal Resistance, Junction to Ambient
TC = 25°C TC = 25°C
(Note 2)
(Note 3)
Ratings 40 ±20 50
See Figure 4 39 75 0.5
-55 to + 175 2 50
Units V V
A
mJ W W/oC oC oC/W oC/W
Notes:
1: Current is limited by bondwire configuration.
2: Starting TJ = 25°C, L = 0.1mH, IAS = 28A, VDD = 40V during inductor charging and VDD = 0V during time in avalanche.
3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
mounting surface presented here is
of the based
drain pins. RθJC is on mounting on a 1
guaranteed by design, in2 pad of 2oz copper.
while
RθJAis
determined
by
the
board
design.
The maximum rating
Package Marking and Ordering Information
Device Marking FDMS9410
Device FDMS9410_F085
Package Power56
Reel Size 13”
Tape Width 12mm
Quantity 3000units
©2015 Fairchild Semiconductor Corporation FDMS9410_F085 Rev. 1.0
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www.fairchildsemi.com
FDMS9410_F085 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted.
Symbol
Parameter
Off Characteristics
Test Conditions
Min. Typ. Max. Units
BVDSS Drain-to-Source Breakdown Voltage
IDSS Drain-to-Source Leakage Current
IGSS
Gate-to-Source Leakage Current
On Characteristics
ID = 250μA, VGS = 0V VDS=40V, TJ = 25oC VGS = 0V TJ = 175oC (Note 4) VGS = ±20V
40 -
- -V - 1 μA - 1 mA - ±100 nA
VGS(th) RDS(on)
Gate to Source Threshold Voltage Drain to Source On Resistance
Dynamic Characteristics
VGS = VDS, ID = 250μA
2.0 3.2 4.0
V
ID = 50A, TJ = 25oC
- 3.7 4.4 mΩ
VGS= 10V TJ = 175oC (Note 4)
-
6.6 7.9 mΩ
Ciss Coss Crss Rg Qg(ToT) Qg(th) Qgs Qgd
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Threshold Gate Charge Gate-to-Source Gate Charge Gate-to-Drain “Miller“ Charge
Switching Characteristics
VDS = 20V, VGS = 0V, f = 1MHz
f = 1MHz
VGS = 0 to 10V VGS = 0 to 2V
VDD = 32V ID = 50A
- 1790
-
- 620
-
- 32
-
- 2.0
-
- 24 36
- 3.3 -
- 9.1 -
- 4.5 -
pF pF pF
Ω nC nC nC nC
ton td(on) tr td(off) tf toff
Turn-On Time Turn-On Delay Rise Time Turn-Off Delay Fall Time Turn-Off Time
Drain-Source Diode Characteristics
VDD = 20V, ID = 50A, VGS = 10V, RGEN = 6Ω
- - 27 ns
- 12.1 -
ns
- 5.9 -
ns
- 18.8 -
ns
- 5.0 -
ns
- - 31 ns
VSD Source-to-Drain Diode Voltage
trr Reverse-Recovery Time Qrr Reverse-Recovery Charge
ISD =50A, VGS = 0V ISD = 25A, VGS = 0V
IF = 50A, dISD/dt = 100A/μs VDD = 32V
--- 45.5 - 33.2
Note: 4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production.
1.25 1.2 59 43
V V ns nC
©2015 Fairchild Semiconductor Corporation FDMS9410_F085 Rev. 1.0
2
www.fairchildsemi.com
FDMS9410_F085 N-Channel PowerTrench® MOSFET
Typical Characteristics
POWER DISSIPATION MULTIPLIER
1.2 100
1.0
CURRENT LIMITED BY PACKAGE
VGS = 10V
80
ID, DRAIN CURRENT (A)
0.8 60
0.6
40 0.4
0.2 20
0.0 0
25 50 75 100 125 150 175 TC, CASE TEMPERATURE(oC)
Figure 1. Normalized Power Dissipation vs. Case Temperature
2 DUTY CYCLE - DESCENDING ORDER
1
D = 0.50 0.20 0.10 0.05 0.02
0.1 0.01
NORMALIZED THERMAL IMPEDANCE, ZθJC
SINGLE PULSE
0 25
50 75 100 125 150 175 200 TC, CASE TEMPERATURE(oC)
Figure 2. Maximum Continuous Drain Current vs. Case Temperature
PDM
t1 t2
NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC
0.01 10-5
10-4
10-3
10-2
10-1
100
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
101
1000
VGS = 10V
100
TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I2
175 - TC 150
IDM, PEAK CURRENT (A)
SINGLE PULSE
10
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
©2015 Fairchild Semiconductor Corporation FDMS9410_F085 Rev. 1.0
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www.fairchildsemi.com
FDMS9410_F085 N-Channel PowerTrench® MOSFET
Typical Characteristics
ID, DRAIN CURRE.