3.3V 1 Gbit SPI-NAND Flash Memory
ESMT
Flash
PRODUCT LIST
Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Loading Throughput Power-up...
Description
ESMT
Flash
PRODUCT LIST
Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Loading Throughput Power-up Ready Time Max Reset Busy Time Note: 1. x2 PROGRAM operation is not defined.
F50L1G41A (2Y)
3.3V 1 Gbit SPI-NAND Flash Memory
Values 3.3V
x1, x21, x4 104MHz
1-bit 9.6ns 104MT/s 1ms (maximum value) 1ms (maximum value)
FEATURES
z Voltage Supply: 3.3V (2.7V~3.6V)
z Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit
z Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte
z Page Read Operation - Page Size: (2K + 64) Byte - Read from Cell to Register with Internal ECC: 100us
z Memory Cell: 1bit/Memory Cell z Support SPI-Mode 0 and SPI-Mode 31
z Fast Write Cycle Time - Program time:400us - Block Erase time: 4ms
z Hardware Data Protection - Program/Erase Lockout During Power Transitions
z Reliable CMOS Floating Gate Technology - Internal ECC Requirement: 1bit/512Byte - Endurance: 100K Program/Erase cycles - Data Retention: 10 years
z Command Register Operation
z NOP: 4 cycles
z OTP Operation
z Bad-Block-Protect
z Boot Read
Note: 1. Mode 0: CPOL = 0, CPHA = 0; Mode 3: CPOL = 1, CPHA = 1
ORDERING INFORMATION
Product ID F50L1G41A -104RAG2Y
Speed 104MHz
Package 8-contact LGA 8x6mm
Comments Pb-free
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2014
Revision: 1.1
1/36
ESMT
F50L1G41A (2Y)
GENERAL DESCRIPTION
The serial electrical interface follows the industry-stan...
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