1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
ESMT
Flash
FEATURES
Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization
x8: - Memory Cell Array: (128M + 4M) x 8bit - ...
Description
ESMT
Flash
FEATURES
Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization
x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (64M + 2M) x 16bit - Data Register: (1K + 32) x 16bit Automatic Program and Erase x8: - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte x16: - Page Program: (1K + 32) Word - Block Erase: (64K + 2K) Word Page Read Operation - Page Size: (2K + 64) Byte (x8)
Page Size: (1K + 32) Word (x16) - Random Read: 25us (Max.) - Serial Access: 45ns (Min.) Memory Cell: 1bit/Memory Cell Fast Write Cycle Time - Program time: 250us (Typ.) - Block Erase time: 2ms (Typ.) Command/Address/Data Multiplexed I/O Port
F59D1G81A / F59D1G161A
1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
Hardware Data Protection - Program/Erase Lockout During Power Transitions
Reliable CMOS Floating Gate Technology - ECC Requirement: x8 - 1bit/528Byte, x16 - 1bit/264Word - Endurance: 100K Program/Erase Cycles - Data Retention: 10 Years
Command Register Operation Automatic Page 0 Read at Power-Up Option
- Boot from NAND support - Automatic Memory Download NOP: 4 cycles Cache Program Operation for High Performance Operation Copy-Back Operation EDO mode OTP Operation No Bad-Block-Erasing-Protect function (user should manage bad blocks before erasing)
ORDERING INFORMATION
Product ID x8: F59D1G81A -45TG F59D1G81A -45BG x16: F59D1G161A -45BG
Speed
45 ns 45 ns
45 ns
Package
48 pin TSOPI 63 ball BGA
6...
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