4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory
ESMT
Flash
FEATURES
Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization
x8: - Memory Cell Array: (512M + 8M) x 8bit - D...
Description
ESMT
Flash
FEATURES
Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization
x8: - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (256M + 4M) x 16bit - Data Register: (1K + 32) x 16bit Automatic Program and Erase x8: - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte x16: - Page Program: (1K + 32) Word - Block Erase: (64K + 2K) Word Page Read Operation - Page Size: (2K + 64) Byte (x8)
Page Size: (1K + 32) Word (x16) - Random Read: 25us (Max.) - Serial Access: 45ns (Min.) Memory Cell: 1bit/Memory Cell Fast Write Cycle Time - Program time: 350us (Typ.) - Block Erase time: 3.5ms (Typ.)
F59D4G81A / F59D4G161A
4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory
Command/Address/Data Multiplexed I/O Port Hardware Data Protection
- Program/Erase Lockout During Power Transitions Reliable CMOS Floating Gate Technology
- ECC Requirement: x8 - 4bit/512Byte x16 - 4bit/256Word
- Endurance: 100K Program/Erase cycles - Data Retention: 10 years Command Register Operation Automatic Page 0 Read at Power-Up Option - Boot from NAND support - Automatic Memory Download NOP: 4 cycles Cache Program/Read Operation Copy-Back Operation Two-Plane Operation EDO mode Bad-Block-Protect
ORDERING INFORMATION
Product ID
Speed
Package
x8:
F59D4G81A -45TG
45 ns
48 pin TSOPI
x16:
F59D4G161A -45TG 45 ns
48 pin TSOPI
Comments Pb-free Pb-free
GENERAL DESCRIPTION
The device is a 512Mx8bit with spare 16Mx8bit capaci...
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