F59D4G81A

ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7V ~ 1.95V)  Organization x8: - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (256M + 4M) x 16bit - Data Register: (1K + 32) x 16bit  Automatic Program and Erase x8: - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte x16: - Page Program: (1K + 32) Word - Block Erase: (64K + 2K) Word  Page Read Operation - Page Size: (2K + 64) Byte (x8) Page Size: (1K + 32) Word (x16) - Random Read: 25us (Max.) - Serial Access: 45ns (Min.)  Memory Cell: 1bit/Memory Cell  Fast Write Cycle Time - Program time: 350us (Typ.) - Block Erase time: 3.5ms (Typ.) F59D4G81A / F59D4G161A 4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory  Command/Address/Data Multiplexed I/O Port  Hardware Data Protection - Program/Erase Lockout During Power Transitions  Reliable CMOS Floating Gate Technology - ECC Requirement: x8 - 4bit/512Byte x16 - 4bit/256Word - Endurance: 100K Program/Erase cycles - Data Retention: 10 years  Command Register Operation  Automatic Page 0 Read at Power-Up Option - Boot from NAND support - Automatic Memory Download  NOP: 4 cycles  Cache Program/Read Operation  Copy-Back Operation  Two-Plane Operation  EDO mode  Bad-Block-Protect ORDERING INFORMATION Product ID Speed Package x8: F59D4G81A -45TG 45 ns 48 pin TSOPI x16: F59D4G161A -45TG 45 ns 48 pin TSOPI Comments Pb-free Pb-free GENERAL DESCRIPTION The device is a 512Mx8bit with spare 16Mx8bit capaci...