F59L2G81A

ESMT Flash FEATURES  Voltage Supply: 3.3V (2.7V ~ 3.6V)  Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit  Automatic Program and Erase - Page Program: (2K + 64) byte - Block Erase: (128K + 4K) byte  Page Read Operation - Page Size: (2K + 64) bytes - Random Read: 25us (Max.) - Serial Access: 25ns (Min.)  Memory Cell: 1bit/Memory Cell  Fast Write Cycle Time - Program time: 350us (Typ.) - Block Erase time: 3.5ms (Typ.)  Command/Address/Data Multiplexed I/O Port  Hardware Data Protection - Program/Erase Lockout During Power Transitions F59L2G81A 2 Gbit (256M x 8) 3.3V NAND Flash Memory  Reliable CMOS Floating Gate Technology - ECC Requirement: 4bit/512Byte - Endurance: 100K Program/Erase cycles - Data Retention: 10 years  Command Register Operation  Automatic Page 0 Read at Power-Up Option - Boot from NAND support - Automatic Memory Download  NOP: 4 cycles  Cache Program Operation for High Performance Program  Cache Read Operation  Copy-Back Operation - EDO mode - OTP Operation - Two-Plane Operation  Bad-Block-Protect ORDERING INFORMATION Product ID Speed Package F59L2G81A -25TG 25 ns 48 pin TSOPI F59L2G81A -25BG 25 ns 63 ball BGA Comments Pb-free Pb-free GENERAL DESCRIPTION The device is a 256Mx8bit with spare 16Mx8bit capacity. The device is offered in 3.3V VCC Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that ca...