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F59L4G81A

4 Gbit (512M x 8) 3.3V NAND Flash Memory

Description

ESMT Flash FEATURES  Voltage Supply: 3.3V (2.7V ~ 3.6V)  Organization - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit  Automatic Program and Erase - Page Program: (2K + 64) bytes - Block Erase: (128K + 4K) bytes  Page Read Operation - Page Size: (2K + 64) bytes - Random Read: 25us (Max.) - Serial Access: 25ns (Min.)  Memory Ce...

Elite Semiconductor

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