F59L512M81A

ESMT Flash FEATURES  Voltage Supply: 2.7V ~ 3.6V  Organization - Memory Cell Array: (64M + 2M) x 8bit - Data Register: (2K + 64) x 8bit  Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte  Page Read Operation - Page Size: (2K + 64) Byte - Random Read: 25us (Max.) - Serial Access: 25ns (Min.)  Memory Cell: 1bit/Memory Cell  Fast Write Cycle Time - Program time: 250us (Typ.) - Block Erase time: 2ms (Typ.)  Command/Address/Data Multiplexed I/O Port  Hardware Data Protection - Program/Erase Lockout During Power Transitions  Reliable CMOS Floating Gate Technology - ECC Requirement: 4 bit/512 Byte - Endurance: 100K Program/Erase cycles - Data Retention: 10 years F59L512M81A 512Mbit (64M x 8) 3.3V NAND Flash Memory  Command Register Operation  Automatic Page 0 Read at Power-Up Option - Boot from NAND support - Automatic Memory Download  NOP: 4 cycles  Cache Program Operation for High Performance Program  Cache Read Operation  Copy-Back Operation  EDO mode  OTP Operation  Bad-Block-Protect ORDERING INFORMATION Product ID F59L512M81A -25TG Speed 25 ns Package 48 pin TSOPI Comments Pb-free GENERAL DESCRIPTION The device is a 64Mx8bit with spare 2Mx8bit capacity. The device is offered in 3.3V VCC Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old d...