DatasheetsPDF.com
IRGP4790-EPbF
Insulated Gate Bipolar Transistor
Description
VCES = 650V IC = 90A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 75A Applications Industrial Motor Drive UPS Solar Inverters Welding Features Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant IRGP479...
International Rectifier
Download IRGP4790-EPbF Datasheet
Similar Datasheet
IRGP4790-EPbF
Insulated Gate Bipolar Transistor
- International Rectifier
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (
Privacy Policy & Contact
)
