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IRGP6660D-EPbF

International Rectifier

Insulated Gate Bipolar Transistor


Description
VCES = 600V IC = 60A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 48A Applications Welding H Bridge Converters IRGP6660DPbF IRGP6660D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode CC C G E n-channel G Gate GCE IRGP6660DPbF TO-247AC C Collector E GC IRGP6660D-EPbF TO-247AD E Emitter Features Low VCE(...



International Rectifier

IRGP6660D-EPbF

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