IRGR3B60KD2PBF

PD - 95036 IRGR3B60KD2PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficient. Lead-Free Benefits Benchmark Efficiency for Motor Control. C G E n-channel Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation. VCES = 600V IC = 4.2A, TC=100°C tsc > 10µs, TJ=150°C VCE(on) typ. = 1.9V Absolute Maximum Ratings Parameter VCES Collector-to-Emitter Voltage IC @ TC = 25°C Continuous Collector Current IC @ TC = 100°C Continuous Collector Current cICM Pulse Collector Current (Ref.Fig.C.T.5) ILM Clamped Inductive Load current IF @ Tc = 25°C Diode Continous Forward Current IF @ Tc = 100°C Diode Continuous Forward Current IFM Diode Maximum Forward Current VGE Gate-to-Emitter Voltage PD @ TC = 25°C Maximum Power Dissipation PD @ TC = 100°C Maximum Power Dissipation TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature Range, for 10 sec. Thermal / Mechanical Characteristics Parameter RθJC Junction-to-Case- IGBT RθJC Junction-to-Case- Diode dRθJA Junction-to-Ambient, (PCB Mount) Wt Weight www.irf.com D-Pak Max. 600 7.8 4.2 15.6 15.6 6.0 3.2 15.6 ±20 52 21 -55 to +150 300 (0.063 in. (1.6mm) from case) Units V A V W °C Min. ––– ––– ––– ––– Typ. ––– ––– ––– 0.3 Ma...