PD - 95229C
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
Features
• Low VCE (on) Non Punch ...
PD - 95229C
INSULATED GATE BIPOLAR
TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
Features
Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. 10μs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficient. Lead-Free
G
E
n-channel
IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF
VCES = 600V
IC = 10A, TC=100°C
tsc > 10μs, TJ=150°C
VCE(on) typ. = 1.8V
Benefits
Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation.
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG
Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Thermal Resistance
TO-220AB
D2Pak
TO-262
IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF
Max. 600 18 10 26 26 18 10 26 ± 20 90 36 -55 to +150
300 (0.063 in. (1.6mm) from case)
Units V
A
V W °C
RθJC RθJC RθCS RθJA RθJA Wt
www.irf.com
Parameter Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to...
