IRGS6B60KPBF

INSULATED GATE BIPOLAR TRANSISTOR PD - 95644A IRGB6B60KPbF IRGS6B60KPbF IRGSL6B60KPbF Features Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free. Benefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation. C G E n-channel VCES = 600V IC = 7.0A, TC=100°C tsc > 10µs, TJ=150°C VCE(on) typ. = 1.8V Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current  Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. TO-220AB D2Pak IRGB6B60K IRGS6B60K TO-262 IRGSL6B60K Max. 600 13 7.0 26 26 ± 20 90 36 -55 to +150 300 (0.063 in. (1.6mm) from case) Units V A V W °C Thermal Resistance RθJC RθCS RθJA RθJA Wt www.irf.com Parameter Junction-to-Case - IGBT Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount‚ Junction-to-Ambient (PCB Mount, steady state)ƒ Weight Min. ––– ––– ––– ––– ––– Typ. ––– 0.50 ––– ––– 1.44 Max. 1.4 ––– 62 40 ––– Units °C/W g 1 11/18/04 IRGB/S/SL6B60KPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter...