Power MOSFET
l Logic-Level Gate Drive
l Advanced Process Technology
l Surface Mount (IRL3803VS)
l Low-profile through-hole (IRL380...
Description
l Logic-Level Gate Drive
l Advanced Process Technology
l Surface Mount (IRL3803VS)
l Low-profile through-hole (IRL3803VL)
l 175°C Operating Temperature l Fast Switching
G
l Fully Avalanche Rated
l Lead-Free
Description
Advanced HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
PD - 95449
IRL3803VSPbF IRL3803VLPbF
HEXFET® Power MOSFET
D VDSS = 30V
RDS(on) = 5.5mΩ
ID = 140A
S
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
D2Pak IRL3803VS
TO-262 IRL3803VL
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C
VGS IAR EAR dv/dt TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor
Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Ene...
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