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Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters
StrongIRFET™ IRL40B215
HEXFET® Power MOSFET
D VDSS
40V
RDS(on) typ.
2.2m
max
2.7m
G
ID (Silicon Limited)
164A
IS D (Package Limited)
120A
Benefits Optimized for Logic Level Drive Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free* RoHS Compliant, Halogen-Free
G Gate
GDS TO-220AB IRL40B215
D Drain
S Source
Base part number IRL40B215
Package Type TO-220
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number IRL40B215
RDS(on), Drain-to -Source On Resistance (m) ID, Drain Current (A)
12 ID = 98A
9
6 TJ = 125°C
3 TJ = 25°C
0 2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1 www.irf.com © 2015 International Rectifier
175 150 125 100
75 50 25
0 25
Limited By Package
50 75 100 125 150 TC , Case Temperature (°C)
175
Fig 2. Maximum Drain Current vs. Case Temperature
Submit Datasheet Feedback
April 27, 2015
IRL40B215
Absolute Maximum Rating
Symbol ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C
Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited) Pulsed Drain Current
Maximum Power Dissipation Linear Derating Factor
VGS Gate-to-Source Voltage TJ Operating Junction and
TSTG
Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting Torque, 6-32 or M3 Screw
Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy
EAS (Thermally limited) Single Pulse Avalanche Energy
IAR Avalanche Current EAR Repetitive Avalanche Energy
Thermal Resistance
Symbol
Parameter
RJC RCS RJA
Junction-to-Case Case-to-Sink, Flat Greased Surface Junction-to-Ambient
Max. 164 116 120 656 143 0.95 ± 20
-55 to + 175
300 10 lbf·in (1.1 N·m)
161 386
See Fig 15, 16, 23a, 23b
Typ. ––– 0.50 –––
Max. 1.05 ––– 62
Units
A
W W/°C
V °C
mJ A mJ Units °C/W
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
RG Gate Resistance
Min. 40
–––
––– ––– 1.0 ––– ––– ––– –––
–––
Typ. –––
0.033
2.2 2.8 ––– ––– ––– ––– –––
2.0
Max. –––
–––
2.7 3.5 2.4 1.0 150 100 -100
–––
Units V
V/°C
m V µA
nA
Conditions
VGS = 0V, ID = 250µA
Reference.