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IRL40B215 Dataheets PDF



Part Number IRL40B215
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRL40B215 DatasheetIRL40B215 Datasheet (PDF)

Application  Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC Inverters StrongIRFET™ IRL40B215 HEXFET® Power MOSFET   D VDSS 40V RDS(on) typ. 2.2m max 2.7m G ID (Silicon Limited) 164A IS D (Package Limited) 120A Benefits  Optimized for Logic L.

  IRL40B215   IRL40B215



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Application  Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC Inverters StrongIRFET™ IRL40B215 HEXFET® Power MOSFET   D VDSS 40V RDS(on) typ. 2.2m max 2.7m G ID (Silicon Limited) 164A IS D (Package Limited) 120A Benefits  Optimized for Logic Level Drive  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability  Lead-Free*  RoHS Compliant, Halogen-Free G Gate GDS TO-220AB IRL40B215 D Drain S Source Base part number IRL40B215 Package Type TO-220 Standard Pack Form Quantity Tube 50 Orderable Part Number IRL40B215 RDS(on), Drain-to -Source On Resistance (m) ID, Drain Current (A) 12 ID = 98A 9 6 TJ = 125°C 3 TJ = 25°C 0 2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 1 www.irf.com © 2015 International Rectifier 175 150 125 100 75 50 25 0 25 Limited By Package 50 75 100 125 150 TC , Case Temperature (°C) 175 Fig 2. Maximum Drain Current vs. Case Temperature Submit Datasheet Feedback April 27, 2015   IRL40B215 Absolute Maximum Rating Symbol ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited) Pulsed Drain Current  Maximum Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting Torque, 6-32 or M3 Screw Avalanche Characteristics  EAS (Thermally limited) Single Pulse Avalanche Energy  EAS (Thermally limited) Single Pulse Avalanche Energy  IAR Avalanche Current  EAR Repetitive Avalanche Energy  Thermal Resistance   Symbol Parameter RJC RCS RJA Junction-to-Case  Case-to-Sink, Flat Greased Surface Junction-to-Ambient  Max. 164 116 120 656 143 0.95 ± 20 -55 to + 175   300 10 lbf·in (1.1 N·m)   161 386 See Fig 15, 16, 23a, 23b Typ. ––– 0.50 ––– Max. 1.05 ––– 62 Units A  W W/°C V °C   mJ A mJ Units °C/W   Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage RG Gate Resistance Min. 40 ––– ––– ––– 1.0 ––– ––– ––– ––– ––– Typ. ––– 0.033 2.2 2.8 ––– ––– ––– ––– ––– 2.0 Max. ––– ––– 2.7 3.5 2.4 1.0 150 100 -100 ––– Units V V/°C m V µA nA  Conditions VGS = 0V, ID = 250µA Reference.


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