Triacs
BTA25H-600CW3G, BTA25H-800CW3G
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac contr...
Description
BTA25H-600CW3G, BTA25H-800CW3G
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required.
Features
Blocking Voltage to 800 Volts On-State Current Rating of 25 Amperes RMS at 95°C Uniform Gate Trigger Currents in Three Quadrants High Immunity to dV/dt − 500 V/ms minimum at 150°C Minimizes Snubber Networks for Protection Industry Standard TO-220AB Package − Internally Isolated High Commutating dI/dt − 4.0 A/ms minimum at 150°C Internally Isolated (2500 VRMS) These are Pb−Free Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 150°C, Sine Wave, 50 to 60 Hz, Gate Open)
BTA25H−600CW3G BTA25H−800CW3G
VDRM, VRRM
600 800
V
On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 95°C)
IT(RMS)
25
A
Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC = 25°C) Circuit Fusing Consideration (t = 8.3 ms)
ITSM I2t
250 A 260 A2sec
Non−Repetitive Surge Peak Off−State Voltage (TJ = 25°C, t = 8.3 ms)
VDSM/ VRSM
VDRM/VRRM +100
V
Peak Gate Current (TJ = 150°C, t ≤ 20 ms) IGM 4.0 A
Average Gate Power (TJ = 150°C)
PG(AV)
0.5
W
Operating Junction Temperature Range
TJ −40 to +150 °C
Storage Temperature Range
Tstg −40 to +150 °C
RMS Isolation Voltage (t = 300 ms, R.H. ≤ 30%, TA = 25°C)
Viso 2500 V
Stresses exceeding Maximum Ratings may ...
Similar Datasheet
- BTA25H-800CW3G Triacs - ON Semiconductor