Document
IGBT
Highspeed5FASTIGBTinTRENCHSTOPTM5technology
IGW40N65H5A
650VIGBT Highspeedswitchingseriesfifthgeneration
Datasheet
IndustrialPowerControl
IGW40N65H5A
Highspeedswitchingseriesfifthgeneration
Highspeed5FASTIGBTinTRENCHSTOPTM5technology
FeaturesandBenefits:
HighspeedH5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowgatechargeQG •Maximumjunctiontemperature175°C •QualifiedaccordingtoAEC-Q101 •Greenpackage(RoHScompliant) •CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/
Applications:
•Batterycharger •DC/DCconverter
Packagepindefinition: •Pin1-gate •Pin2&backside-collector •Pin3-emitter
12 3
G
C E
KeyPerformanceandPackageParameters
Type
VCE IC VCEsat,Tvj=25°C
IGW40N65H5A
650V 40A
1.66V
Tvjmax 175°C
Marking G40EH5A
Package PG-TO247-3
2 Rev.2.1,2014-12-15
IGW40N65H5A
Highspeedswitchingseriesfifthgeneration
TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
3 Rev.2.1,2014-12-15
IGW40N65H5A
Highspeedswitchingseriesfifthgeneration
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Symbol
Value
Unit
Collector-emittervoltage,Tvj≥25°C DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C Pulsedcollectorcurrent,tplimitedbyTvjmax1)
VCE IC ICpuls
650
74.0 46.0 120.0
V A A
Turn off safe operating area VCE≤650V,Tvj≤175°C,tp=1µs1)
-
120.0
A
Gate-emitter voltage TransientGate-emittervoltage(tp≤10µs,D<0.010) PowerdissipationTC=25°C PowerdissipationTC=100°C
Operating junction temperature
Storage temperature Soldering temperature,2) wave soldering 1.6mm (0.063in.) from case for 10s
VGE
Ptot Tvj Tstg
±20 ±30 250.0 125.0 -40...+175 -55...+150
260
V
W °C °C °C
Mounting torque, M3 screw Maximum of mounting processes: 3
M
0.6 Nm
ThermalResistance
Parameter Characteristic
IGBT thermal resistance, junction - case
Thermal resistance junction - ambient
Symbol Conditions
Rth(j-c) Rth(j-a)
Max.Value
Unit
0.60 K/W 40 K/W
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES
Collector-emitter saturation voltage VCEsat
Gate-emitter threshold voltage
VGE(th)
Zero gate voltage collector current ICES
Gate-emitter leakage current Transconductance
IGES gfs
VGE=0V,IC=0.20mA VGE=15.0V,IC=40.0A Tvj=25°C Tvj=125°C Tvj=175°C IC=0.40mA,VCE=VGE VCE=650V,VGE=0V Tvj=25°C Tvj=175°C VCE=0V,VGE=20V VCE=20V,IC=40.0A
Value Unit
min. typ. max.
650 -
-V
-
1.66 2.10 1.85 -
V
- 2.05 -
3.2 4.0 4.8 V
- - 40.0 µA - 500.0 -
- - 100 nA
- 50.0 - S
1) Defined by design. Not subject to production test. 2) Package not recommended for surface mount applications
4
Rev.2.1,2014-12-15
IGW40N65H5A
Highspeedswitchingseriesfifthgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance Output capacitance Reverse transfer capacitance
Gate charge
Internal emitter inductance measured 5mm (0.197 in.) from case
Symbol Conditions
Cies
Coes VCE=25V,VGE=0V,f=1MHz
Cres
QG
VCC=520V,IC=40.0A, V.