IPA083N10N5

IPA083N10N5 MOSFET OptiMOSª5Power-Transistor,100V Features Idealforhighfrequencyswitchingandsync.rec. ExcellentgatechargexRDS(on)product(FOM) Verylowon-resistanceRDS(on) N-channel,normallevel 100%avalanchetested Pb-freeplating;RoHScompliant QualifiedaccordingtoJEDEC1)fortargetapplications Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 8.3 mΩ ID 44 A Qoss 40 nC QG(0V..10V) 30 nC TO-220-FP Gate Pin 1 Drain Pin 2 Source Pin 3 Type/OrderingCode IPA083N10N5 Package PG-TO220-FP Marking 083N10N5 RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.1,2016-10-03 OptiMOSª5Power-Transistor,100V IPA083N10N5 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics diagrams . . . . . . ...