IRF7488

PD - 94507 IRF7488 Applications l High frequency DC-DC converters HEXFET® Power MOSFET VDSS 80V RDS(on) max 29mW@VGS=10V Qg 38nC Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) S S S l Fully Characterized Avalanche Voltage G and Current 18 27 36 45 Top View AA D D D D SO-8 Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient „ Notes  through „ are on page 9 www.irf.com Max. 80 ± 20 6.3 5.0 50 2.5 1.6 20 -55 to + 150 300 (1.6mm from case ) Units V A W mW/°C °C Typ. ––– ––– Max. 20 50 Units °C/W 1 9/23/02 IRF7488 Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage IGSS Gate-to-Source Reverse Leakage 80 –...