Document
Applications
l High frequency DC-DC converters l Lead-Free
PD - 95283
IRF7488PbF
HEXFET® Power MOSFET
VDSS
80V
RDS(on) max
29mW@VGS=10V
Qg
38nC
Benefits
S
l Low Gate-to-Drain Charge to Reduce Switching Losses
S
l Fully Characterized Capacitance Including S
Effective COSS to Simplify Design, (See App. Note AN1001)
G
l Fully Characterized Avalanche Voltage
and Current
18 27 36 45
Top View
AA D
D
D
D
SO-8
Absolute Maximum Ratings
Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C
TJ TSTG
Parameter Drain-Source Voltage
Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Thermal Resistance
Symbol
RθJL RθJA
Parameter Junction-to-Drain Lead Junction-to-Ambient
Notes through are on page 9 www.irf.com
Max. 80 ± 20 6.3 5.0 50 2.5 1.6 20
-55 to + 150
300 (1.6mm from case )
Units V
A W mW/°C °C
Typ. ––– –––
Max. 20 50
Units °C/W
1
09/21/04
IRF7488PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage IGSS Gate-to-Source Reverse Leakage
80 ––– ––– ––– 0.089 ––– ––– 24 29
2.0 ––– 4.0 ––– ––– 20 ––– ––– 250 ––– ––– 200 ––– ––– -200
V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 3.8A V VDS = VGS, ID = 250µA µA VDS = 80V, VGS = 0V
VDS = 64V, VGS = 0V, TJ = 125°C nA VGS = 20V
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs Forward Transconductance
9.3 ––– ––– S VDS = 15V, ID = 3.8A
Qg Total Gate Charge
––– 38 57
ID = 3.8A
Qgs Gate-to-Source Charge
––– 9.1
nC VDS = 40V
Qgd Gate-to-Drain ("Miller") Charge
––– 12
VGS = 10V,
td(on)
Turn-On Delay Time
––– 13 –––
VDD = 40V
tr td(off) tf
Rise Time Turn-Off Delay Time Fall Time
––– 12 ––– ns ID = 3.8A
––– 44 –––
RG = 9.1Ω
––– 16 –––
VGS = 10V
Ciss Input Capacitance
––– 1680 –––
VGS = 0V
Coss
Output Capacitance
––– 270 –––
VDS = 25V
Crss Reverse Transfer Capacitance
––– 32 ––– pF ƒ = 1.0MHz
Coss
Output Capacitance
––– 1760 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss Coss eff.
Output Capacitance Effective Output Capacitance
––– 170 ––– ––– 340 –––
VGS = 0V, VDS = 64V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 64V
Avalanche Characteristics
Parameter EAS Single Pulse Avalanche Energy IAR Avalanche Current
Typ. ––– –––
Max. 96 3.8
Units mJ A
Diode Characteristics
Parameter
IS Continuous Source Current (Body Diode)
ISM Pulsed Source Current (Body Diode)
VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse RecoveryCharge
2
Min.
–––
––– ––– ––– –––
Typ.
–––
––– ––– 65 190
Max. 2.3
50 1.3 98 290
Units
A
V ns nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 3.8A, VGS = 0V
TJ = 25°C, IF = 3.8A di/dt = 100A/µs
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ID, Drain-to-Source Current (A)
IRF7488PbF
100 VGS
TOP 15V
12V
10
10V 6.0V
5.5V
5.0V
4.5V
1 BOTTOM 4.0V
0.1
0.01
0.001 0.1
4.0V
20µs PULSE WIDTH Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
ID, Drain-to-Source Current (A)
100 VGS
TOP 15V
12V
10V
6.0V
5.5V
10
5.0V 4.5V
BOTTOM 4.0V
1
4.0V
0.1 0.1
20µs PULSE WIDTH Tj = 150°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
ID, Drain-to-Source Current (Α)
RDS(on) , Drain-to-Source On Resistance (Normalized)
100.00 10.00
TJ = 150°C
2.5
ID = 6.3A VGS = 10V
2.0
1.00
0.10
0.01 4.0
TJ = 25°C
VDS = 25V 20µs PULSE WIDTH
5.0 6.0
VGS , Gate-to-Source Voltage (V)
7.0
Fig 3. Typical Transfer Characteristics
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1.5
1.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance Vs. Temperature
3
IRF7488PbF
C, Capacitance (pF)
100000 10000 1000 100
VGS Ciss Crss Coss
= 0V, f = 1 MHZ
= Cgs + Cgd, = Cgd = Cds + Cgd
Cds
SHORTED
Ciss Coss Crss
10 1
10
VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
VGS, Gate-to-Source Voltage (V)
20 ID= 3.8A
16
12
VDS= 64V VDS= 40V VDS= 16V
8
4
0 0 10 20 30 40 50 60
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
ISD, Reverse Drain Current (A)
ID, Drain-to-Source Current (A)
100.0
TJ = 150°C 10.0
1000 100
OPERATION IN THIS AREA LIMITED BY RDS(on)
1.0
0.1 0.4
TJ = 25°C VGS = 0V
0.6 0.8 1.0 VSD, Source-toDrain Voltage (V)
1.2
Fig 7. Typical Source-Drain Diode Forward Voltage
4
10 100µs ec
1ms ec 1
Tc = 25°C Tj = 150°C Single Pulse 0.1
1 10
10ms.