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IRF7488PBF Dataheets PDF



Part Number IRF7488PBF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRF7488PBF DatasheetIRF7488PBF Datasheet (PDF)

Applications l High frequency DC-DC converters l Lead-Free PD - 95283 IRF7488PbF HEXFET® Power MOSFET VDSS 80V RDS(on) max 29mW@VGS=10V Qg 38nC Benefits S l Low Gate-to-Drain Charge to Reduce Switching Losses S l Fully Characterized Capacitance Including S Effective COSS to Simplify Design, (See App. Note AN1001) G l Fully Characterized Avalanche Voltage and Current 18 27 36 45 Top View AA D D D D SO-8 Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM .

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Applications l High frequency DC-DC converters l Lead-Free PD - 95283 IRF7488PbF HEXFET® Power MOSFET VDSS 80V RDS(on) max 29mW@VGS=10V Qg 38nC Benefits S l Low Gate-to-Drain Charge to Reduce Switching Losses S l Fully Characterized Capacitance Including S Effective COSS to Simplify Design, (See App. Note AN1001) G l Fully Characterized Avalanche Voltage and Current 18 27 36 45 Top View AA D D D D SO-8 Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient „ Notes  through „ are on page 9 www.irf.com Max. 80 ± 20 6.3 5.0 50 2.5 1.6 20 -55 to + 150 300 (1.6mm from case ) Units V A W mW/°C °C Typ. ––– ––– Max. 20 50 Units °C/W 1 09/21/04 IRF7488PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage IGSS Gate-to-Source Reverse Leakage 80 ––– ––– ––– 0.089 ––– ––– 24 29 2.0 ––– 4.0 ––– ––– 20 ––– ––– 250 ––– ––– 200 ––– ––– -200 V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA ƒ mΩ VGS = 10V, ID = 3.8A ƒ V VDS = VGS, ID = 250µA µA VDS = 80V, VGS = 0V VDS = 64V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V Dynamic @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 9.3 ––– ––– S VDS = 15V, ID = 3.8A Qg Total Gate Charge ––– 38 57 ID = 3.8A Qgs Gate-to-Source Charge ––– 9.1 nC VDS = 40V Qgd Gate-to-Drain ("Miller") Charge ––– 12 VGS = 10V, td(on) Turn-On Delay Time ––– 13 ––– VDD = 40V tr td(off) tf Rise Time Turn-Off Delay Time Fall Time ––– 12 ––– ns ID = 3.8A ––– 44 ––– RG = 9.1Ω ––– 16 ––– VGS = 10V ƒ Ciss Input Capacitance ––– 1680 ––– VGS = 0V Coss Output Capacitance ––– 270 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 32 ––– pF ƒ = 1.0MHz Coss Output Capacitance ––– 1760 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Coss eff. Output Capacitance Effective Output Capacitance ––– 170 ––– ––– 340 ––– VGS = 0V, VDS = 64V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 64V … Avalanche Characteristics Parameter EAS Single Pulse Avalanche Energy‚ IAR Avalanche Current Typ. ––– ––– Max. 96 3.8 Units mJ A Diode Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode)  VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse RecoveryCharge 2 Min. ––– ––– ––– ––– ––– Typ. ––– ––– ––– 65 190 Max. 2.3 50 1.3 98 290 Units A V ns nC Conditions MOSFET symbol D showing the integral reverse G p-n junction diode. S TJ = 25°C, IS = 3.8A, VGS = 0V ƒ TJ = 25°C, IF = 3.8A di/dt = 100A/µs ƒ www.irf.com ID, Drain-to-Source Current (A) IRF7488PbF 100 VGS TOP 15V 12V 10 10V 6.0V 5.5V 5.0V 4.5V 1 BOTTOM 4.0V 0.1 0.01 0.001 0.1 4.0V 20µs PULSE WIDTH Tj = 25°C 1 10 VDS, Drain-to-Source Voltage (V) 100 Fig 1. Typical Output Characteristics ID, Drain-to-Source Current (A) 100 VGS TOP 15V 12V 10V 6.0V 5.5V 10 5.0V 4.5V BOTTOM 4.0V 1 4.0V 0.1 0.1 20µs PULSE WIDTH Tj = 150°C 1 10 VDS, Drain-to-Source Voltage (V) 100 Fig 2. Typical Output Characteristics ID, Drain-to-Source Current (Α) RDS(on) , Drain-to-Source On Resistance (Normalized) 100.00 10.00 TJ = 150°C 2.5 ID = 6.3A VGS = 10V 2.0 1.00 0.10 0.01 4.0 TJ = 25°C VDS = 25V 20µs PULSE WIDTH 5.0 6.0 VGS , Gate-to-Source Voltage (V) 7.0 Fig 3. Typical Transfer Characteristics www.irf.com 1.5 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7488PbF C, Capacitance (pF) 100000 10000 1000 100 VGS Ciss Crss Coss = 0V, f = 1 MHZ = Cgs + Cgd, = Cgd = Cds + Cgd Cds SHORTED Ciss Coss Crss 10 1 10 VDS, Drain-to-Source Voltage (V) 100 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage VGS, Gate-to-Source Voltage (V) 20 ID= 3.8A 16 12 VDS= 64V VDS= 40V VDS= 16V 8 4 0 0 10 20 30 40 50 60 QG Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage ISD, Reverse Drain Current (A) ID, Drain-to-Source Current (A) 100.0 TJ = 150°C 10.0 1000 100 OPERATION IN THIS AREA LIMITED BY RDS(on) 1.0 0.1 0.4 TJ = 25°C VGS = 0V 0.6 0.8 1.0 VSD, Source-toDrain Voltage (V) 1.2 Fig 7. Typical Source-Drain Diode Forward Voltage 4 10 100µs ec 1ms ec 1 Tc = 25°C Tj = 150°C Single Pulse 0.1 1 10 10ms.


IRF7488 IRF7488PBF ISO2H823V2.5


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