UNISONIC TECHNOLOGIES CO., LTD
UP9972
Preliminary
N-CHANNEL ENHANCEMENT MODE
DESCRIPTION
The UTC UP9972 is an N-ch...
UNISONIC TECHNOLOGIES CO., LTD
UP9972
Preliminary
N-CHANNEL ENHANCEMENT MODE
DESCRIPTION
The UTC UP9972 is an N-ch enhancement mode Power MOS Field Effect
Transistor using advanced technology to provide fast speed switching, low on-resistance and perfect cost-effectiveness.
The UTC UP9972 is ideal for commercial-industrial surface mount applications applied to DC/DC converters or other low voltage applications.
FEATURES
* Single drive required * Fast switching capability * Ultra low gate charge * Halogen Free
SYMBOL
(3) Drain
Power MOSFET
2. Gate
(1) Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UP9972L-TA3-T
UP9972G-TA3-T
Package TO-220
Pin Assignment 123 GDS
Packing Tube
www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd
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QW-R502-372.a
UP9972
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDS 60 V
Gate-Source Voltage
VGS ±25 V
Continuous Drain Current (VGS =10V, TC=25°C)
ID
60 A
Pulsed Drain Current (Note 2)
IDM
230 A
Avalanche Current (Note 3)
IAR 30 A
Single Pulse Avalanche Energy (Note 3)
EAS
45 mJ
Power Dissipation (TC=25°C)
PD
89 W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse...