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UP9972

Unisonic Technologies

N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD UP9972 Preliminary N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UTC UP9972 is an N-ch...


Unisonic Technologies

UP9972

File Download Download UP9972 Datasheet


Description
UNISONIC TECHNOLOGIES CO., LTD UP9972 Preliminary N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UTC UP9972 is an N-ch enhancement mode Power MOS Field Effect Transistor using advanced technology to provide fast speed switching, low on-resistance and perfect cost-effectiveness. The UTC UP9972 is ideal for commercial-industrial surface mount applications applied to DC/DC converters or other low voltage applications. „ FEATURES * Single drive required * Fast switching capability * Ultra low gate charge * Halogen Free „ SYMBOL (3) Drain Power MOSFET 2. Gate (1) Source „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free UP9972L-TA3-T UP9972G-TA3-T Package TO-220 Pin Assignment 123 GDS Packing Tube www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-372.a UP9972 Preliminary Power MOSFET „ ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±25 V Continuous Drain Current (VGS =10V, TC=25°C) ID 60 A Pulsed Drain Current (Note 2) IDM 230 A Avalanche Current (Note 3) IAR 30 A Single Pulse Avalanche Energy (Note 3) EAS 45 mJ Power Dissipation (TC=25°C) PD 89 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse...




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