UP2790

UNISONIC TECHNOLOGIES CO., LTD UP2790 SWITCHING N- AND P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UP2790 uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use in Motor Drive application.  FEATURES * Low on-state resistance: N-channel: VGS =10V, ID=3A; RDS(ON) = 28 mΩ (Max.) VGS=4.5V, ID=3A; RDS(ON) = 40 mΩ (Max.) P-channel: VGS= -10V, ID=-3A; RDS(ON) = 60 mΩ (Max.) VGS=-4.5V, ID=-3A; RDS(ON) = 80 mΩ (Max.) * Low input capacitance N-channel : CISS with 500 pF (Typ.) P-channel : CISS with 460 pF (Typ.) * Built-in gate protection diode  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number UP2790G-S08-R Note: Pin Assignment: G: Gate D: Drain Package SOP-8 S: Source Pin Assignment 12345678 SGSGDDDD Packing Tape Reel www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-339.C UP2790  MARKING  PIN CONFIGURATION Source 1 1 Gate 1 2 Source 2 3 Gate 2 4 Power MOSFET 8 Drain 1 7 Drain 1 6 Drain 2 5 Drain 2 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-339.C UP2790 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TA =25°C, unless otherwise specified) N-Channel PARAMETER Drain to Source Voltage (VGS=0V) Gate to Source Voltage (VDS=0V) Continuous Drain Current Pulsed Drain Current (Note 2) Single Avalanche Current (Note 3) Single Avalanche Energy (Note 3) Power Dissipation (Note 4) Junction Temperature Storage Temperature SYMBOL VDSS ...