KM616FS1000

KM616FV1000, KM616FS1000, KM616FR1000 Family CMOS SRAM Document Title 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft 0.1 Revise - Erase 100ns part from KM616FS1000 Family - Add 150ns part on KM616FS1000 Family - Add 32-sTSOP1 new package - Add high power version ISB1=5.0µA(Max) - Change VDR(Min) 1.0 to 1.5V 1.0 Finalize - Concept change high power version to low low power version ISB1=5.0µA(Max) - Change super low power version with special handling ISB1=1.0µA(Max) - Reduce Icc & Icc1 Read : 15mA to 10mA Write : 25mA to 20mA 2.0 Revise - Change datasheet format - Erase reverse type package Draft Date March 15, 1996 June 3, 1996 Remark Advance Preliminary December 1, 1996 Final February 26, 1998 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 2.0 February 1998 KM616FV1000, KM616FS1000, KM616FR1000 Family CMOS SRAM 64Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM FEATURES Process Technology : Full CMOS Organization : 64Kx16 bit Power Supply Voltage KM616FV1000 Family : 3.0V ~ 3.6V KM616FS1000 Family : 2.3V ~ 3.3V KM616FR1000 Family : 1.8V ~ 2.7V Low Data Retention Voltage : 1.5V(Min) Three state output status and TTL Comp...