PESD5V0U5BF

PESD5V0U5BF; PESD5V0U5BV Ultra low capacitance bidirectional fivefold ESD protection arrays Rev. 01 — 15 August 2008 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance bidirectional fivefold ElectroStatic Discharge (ESD) protection arrays in ultra small Surface-Mounted Device (SMD) plastic packages designed to protect up to five signal lines from the damage caused by ESD and other transients. Table 1. Product overview Type number Package NXP PESD5V0U5BF SOT886 PESD5V0U5BV SOT666 JEDEC MO-252 - Package configuration leadless ultra small ultra small and flat lead 1.2 Features I Bidirectional ESD protection of up to I ESD protection up to 10 kV five lines I Ultra low diode capacitance: Cd = 2.9 pF I IEC 61000-4-2; level 4 (ESD) I Ultra low leakage current: IRM = 5 nA I AEC-Q101 qualified 1.3 Applications I Computers and peripherals I Audio and video equipment I Cellular handsets and accessories I 10/100/1000 Mbit/s Ethernet I Communication systems I Portable electronics I Subscriber Identity Module (SIM) card protection I FireWire I High-speed data lines NXP Semiconductors PESD5V0U5BF; PESD5V0U5BV Ultra low capacitance bidirectional fivefold ESD protection arrays 1.4 Quick reference data Table 2. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Per diode VRWM reverse standoff voltage Cd diode capacitance f = 1 MHz; VR = 0 V Min Typ Max Unit - - 5V - 2.9 3.5 pF 2. Pinning information T...