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PESD5V0V4UK

NXP

Very low capacitance unidirectional quadruple ESD protection diode arrays

PESD3V3V4UK; PESD5V0V4UK; PESD9V0V4UK Very low capacitance unidirectional quadruple ESD protection diode arrays Rev. ...


NXP

PESD5V0V4UK

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Description
PESD3V3V4UK; PESD5V0V4UK; PESD9V0V4UK Very low capacitance unidirectional quadruple ESD protection diode arrays Rev. 1 — 25 August 2010 Product data sheet 1. Product profile 1.1 General description Very low capacitance unidirectional quadruple ElectroStatic Discharge (ESD) protection diode arrays in a leadless ultra small SOT891 Surface-Mounted Device (SMD) plastic package designed to protect up to four unidirectional signal lines from the damage caused by ESD and other transients. 1.2 Features and benefits „ ESD protection of up to four lines „ Very low diode capacitance „ Max. peak pulse power: PPP = 28 W „ Low clamping voltage: VCL = 9.5 V „ AEC-Q101 qualified „ Very low leakage current: IRM = 0.1 μA „ ESD protection up to 15 kV „ IEC 61000-4-2; level 4 (ESD) „ IEC 61000-4-5 (surge); IPP = 2.7 A 1.3 Applications „ Computers and peripherals „ Audio and video equipment „ Cellular handsets and accessories „ Communication systems „ Portable electronics „ Subscriber Identity Module (SIM) card protection 1.4 Quick reference data Table 1. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Per diode VRWM reverse standoff voltage PESD3V3V4UK PESD5V0V4UK PESD9V0V4UK Min Typ Max Unit - - 3.3 V - - 5.0 V - - 9.0 V NXP Semiconductors PESDxV4UK series Very low capacitance unidirectional quadruple ESD protection arrays Table 1. Quick reference data …continued Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditio...




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