Power MOSFET
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode
IXFH12N80P IXFQ12N80P IXFV12N80P IXFV12N80PS
VDSS = 800 V
I...
Description
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode
IXFH12N80P IXFQ12N80P IXFV12N80P IXFV12N80PS
VDSS = 800 V
ID25 = 12 A ≤RDS(on) 0.85 Ω
trr ≤ 250 ns
TO-247 (IXFH)
Symbol
Test Conditions
Maximum Ratings
V DSS
VDGR
V GS
VGSM
ID25 IDM IAR E
AR
EAS
T J
= 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Tranisent
TC = 25°C TC = 25°C, pulse width limited by TJM
TC = 25°C
T C
= 25°C
TC = 25°C
800 V
800 V TO-3P (IXFQ)
±30 V
±40 V
12 A
36 A 6A
G DS
30 mJ PLUS220 (IXFV)
0.8 J
D (TAB) D (TAB)
dv/dt
PD T
J
TJM Tstg
TL TSOLD Md FC Weight
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,
T J
≤
150°C,
R G
=
5
Ω
TC = 25°C
10
360 -55 ... +150
150 -55 ... +150
V/ns
W
GDS
D (TAB)
°C °C PLUS220 SMD (IXFV...S)
°C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s
Mounting torque (TO-247, TO-3P)
300 °C 260 °C
1.13/10 Nm/lb.in.
G S
Mounting force (PLUS220,PLUS220SMD) 11..65/2.5..15
PLUS220 & PLUS220SMD T0-3P TO-247
4.0 5.5 6.0
N/lb.
g g g
G = Gate S = Source
Features
D (TAB)
D = Drain TAB = Drain
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BV DSS
V GS
=
0
V,
I
D
=
250
μA
VGS(th)
VDS = VGS, ID = 2.5 mA
Characteristic Values Min. Typ. Max.
800 V
3.0 5.5 V
z International standard packages z Unclamped Inductive Switching (UIS)
rated z Low package inductance
- easy to drive and to protect
IGSS I
DSS
RDS(on)
VGS = ±30 V, VDS = 0 V
V =V DS DSS
V =0V GS
T J
=
125°C
VGS = 10 V, ID = 0.5 ID25 , Note 1
...
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