11N60K-MT

UNISONIC TECHNOLOGIES CO., LTD 11N60K-MT Preliminary 11A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 11N60K-MT is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 11N60K-MT is universally applied in electronic lamp ballasts based on half bridge topology, high efficiency switched mode power supplies, active power factor correction, etc.  FEATURES * RDS(ON) < 1.00 Ω @ VGS = 10 V, ID = 5.5 A * Fast Switching * With 100% Avalanche Tested  SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 11N60KL-TF2-T 11N60KG-TF2-T TO-220F2 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123 GD S Packing Tube  MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-A99.c 11N60K-MT Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage VDSS 600 V Gate to Source Voltage Continuous Drain Current Pulsed Drain Current (Note 3) TC=25°C TC=100°C VGSS ID IDM ±30 11 (Note 2) 7 (Note 2) 44 (Note 2) V A A A Single Pulsed Avalanche Energy(Note 4) Peak Diode Recovery dv/dt (Note 5) EAS dv/dt 440 mJ 4.5 V/ns Power Dissipation Derate above 25°C PD...