12N60K-MT

UNISONIC TECHNOLOGIES CO., LTD 12N60K-MT Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N60K-MT are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTC’s proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode the advanced technology has been especially tailored. 1 TO-220 1 TO-220F 1 TO-220F1 1 TO-220F2  FEATURES * RDS(ON) ≤ 0.70Ω @ VGS=10V, ID=6.0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness 1 TO-220F3  SYMBOL  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 12N60KL-TA3-T 12N60KG-TA3-T 12N60KL-TF3-T 12N60KG-TF3-T 12N60KL-TF1-T 12N60KG-TF1-T 12N60KL-TF2-T 12N60KG-TF2-T 12N60KL-TF3T-T 12N60KG-TF3T-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F TO-220F1 TO-220F2 TO-220F3 Pin Assignment 123 GDS GDS GDS GDS GDS Packing Tube Tube Tube Tube Tube www.unisonic.com.tw Copyright © 2019 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-B06.I 12N60K-MT  MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 9 QW-R502-B06.I 12N60K-MT Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VD...