1N50A

UNISONIC TECHNOLOGIES CO., LTD 1N50A Preliminary 1.0A, 500V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC 1N50A is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 1N50A is generally applied in high efficiency switch mode power supplies, active power factor correction and electronic lamp ballasts based on half bridge topology.  FEATURES * RDS(ON) < 8.0Ω @ VGS=10V, ID=0.5A * High Switching Speed * 100% Avalanche Tested  SYMBOL  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 1N50AL-TM3-T 1N50AG-TM3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-251 Pin Assignment 123 GDS 1N50AL-TM3-T (1)Packing Type (1) T: Tubel (2)Package Type (2) TM3: TO-251 Packing Tube (3)Green Package (3) L: Lead Free, G: Halogen Free and Lead Free  MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 5 QW-R205-030.a 1N50A Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS 500 V VGSS ±30 V Drain Current Continuous (TC=25°C) Pulsed (Note 3) ID IDM 1 (Note 2) 4 (Note 2) A A Avalanche Energy Power Dissipation Derate above 25°C Single Puls...