1N60-KW

UNISONIC TECHNOLOGIES CO., LTD 1N60-KW 1A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) < 15Ω @ VGS=10V, ID=0.5A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free - 1N60G-AA3-R - 1N60G-AB3-R 1N60L-TM3-T 1N60G-TM3-T 1N60L-TN3-R 1N60G-TN3-R 1N60L-T92-B 1N60G-T92-B 1N60L-T92-K 1N60G-T92-K Note: Pin Assignment: G: Gate D: Drain S: Source Package SOT-223 SOT-89 TO-251 TO-252 TO-92 TO-92 Pin Assignment 123 GDS GDS GDS GDS GDS GDS Packing Tape Reel Tape Reel Tube Tape Reel Tape Box Bulk www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 7 QW-R205-054.D 1N60-KW  MARKING SOT-223 TO-251 / TO-252 Power MOSFET SOT-89 TO-92 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R205-054.D 1N60-KW Power MOSFET ■ ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS 600 V VGSS ±30 V Continuous Drain Current Avalanche Ene...