N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD 25N20
25A, 200V N-CHANNEL ENHANCEMENT MODE POWER MOSFET
DESCRIPTION
The UTC 25N20 is an...
Description
UNISONIC TECHNOLOGIES CO., LTD 25N20
25A, 200V N-CHANNEL ENHANCEMENT MODE POWER MOSFET
DESCRIPTION
The UTC 25N20 is an N-channel enhancement mode power MOSFET and it uses UTC’s perfect technology to provide designers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
It is generally suitable for all commercial-industrial applications and DC/DC converters requiring low voltage.
FEATURES
* RDS(ON) < 160 mΩ @ VGS =10V, ID =16A * Single Drive Requirement * Low Gate Charge * RoHS Compliant
SYMBOL
Power MOSFET
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
25N20L-TF3-T
25N20G-TF3-T
25N20L-TF1-T
25N20G-TF1-T
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F TO-220F1
Pin Assignment 123 GDS GDS
Packing
Tube Tube
MARKING
www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 4
QW-R502-A84.D
25N20
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain Source Voltage
VDSS
200
V
Gate Source Voltage
Continuous Drain Current TC =25°C
(VGS=10V)
TC = 100°C
Pulsed Drain Current (Note 2)
VGSS ID ID IDM
±20 25 15.86 80
V A A A
Total Power Dissipation (TC =25°C) Operating Junction Temperature
PD 50 W
TJ
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation...
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