N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD 3N90-E
3.0A, 900V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 3N90-E provides excellent ...
Description
UNISONIC TECHNOLOGIES CO., LTD 3N90-E
3.0A, 900V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 3N90-E provides excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
FEATURES
* RDS(ON) < 6.2Ω @ VGS=10V, ID=1.5A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
SYMBOL
Power MOSFET
RDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
3N90L-TM3-T
3N90G-TM3-T
3N90L-TMS2-T
3N90G-TMS2-T
3N90L-TMS4-T
3N90G-TMS4-T
3N90L-TN3-R
3N90G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-251 TO-251S2 TO-251S4
TO-252
Pin Assignment 123 GDS GDS GDS GDS
Packing
Tube Tube Tube Tape Reel
MARKING
www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd
1 of 5
QW-R205-007.D
3N90-E
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage (VGS=0V)
VDSS 900 V
Drain-Gate Voltage (RG=20kΩ)
VDGR 900 V
Gate-Source Voltage
VGSS ±30 V
Continuous Drain Current
ID 3 A
Pulsed Drain Current
IDM 10 A
Avalanche Current (Note 2)
IAR 3 A
Single Pulse Avalanche Energy (Note 3)
EAS
100 mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
2.94 V/ns
Power Dissipation
PD 45 W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device coul...
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