N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD
4N65-C
4A, 650V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 4N65-C is a high voltage pow...
Description
UNISONIC TECHNOLOGIES CO., LTD
4N65-C
4A, 650V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 4N65-C is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications including power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) < 3.0Ω @ VGS = 10 V, ID = 2A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
4N65L-TF1-T
4N65G-TF1-T
TO-220F1
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment 123 GDS
Packing Tube
MARKING
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1 of 6
QW-R502-B27.B
4N65-C
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note2)
IAR 4.0 A
Drain Current
Continuous Pulsed (Note2)
ID IDM
4.0 16
A A
Avalanche Energy
Single Pulsed (Note3) Repetitive (Note2)
EAS EAR
150 mJ 5.6 mJ
Peak Diode Recovery dv/dt (Note4)
dv/dt
3.6 V/ns
Power Dissipation
PD 36 W
Junction Temperature
TJ
+150
°С
Operating Temperature
TOPR
-55 ~ +150
°С
Storage Temperature
...
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