F5N50

UNISONIC TECHNOLOGIES CO., LTD F5N50 5A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC F5N50 is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of the minimum on-state resistance and perfect switching performance. It also can withstand high energy pulse in the avalanche and communication mode. The UTC F5N50 can be used in applications, such as active power factor correction, high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology.  FEATURES * RDS(ON) < 1.6Ω @ VGS=10V, ID=2.5A * 100% avalanche tested * High switching speed  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free F5N50L-TF3-T F5N50G-TF3-T F5N50L-TN3-R F5N50G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F TO-252 Pin Assignment 123 GDS GDS Packing Tube Tape Reel  MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-A90.B F5N50 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS VGSS 500 ±30 V V Drain Current Continuous Pulsed (Note 2) ID IDM 5 20 A A Avalanche Current (Note 2) Avalanche Energy Single Pulsed (Note 3) Repetitive (Note 2) Peak Diode Recovery dv/dt (Note 4) IAR EAS EAR dv/dt 5A 200 mJ 7.3 mJ 4.5 V/ns Pow...