UTT6N10Z

UNISONIC TECHNOLOGIES CO., LTD UTT6N10Z 6A, 100V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC UTT6N10Z is a N-channel enhancement mode Power FET, it uses UTC’s advanced technology to provide customers a minimum on-state resistance, high switching speed and ultra low gate charge. The UTC UTT6N10Z is usually used in DC-DC Converters.  FEATURES * RDS(on) < 108 mΩ @ VGS = 10V, ID=3.0A * High Switching Speed  SYMBOL 2.Drain 1 TO-252 1 SOT-223 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT6N10ZL-AA3-R UTT6N10ZG-AA3-R UTT6N10ZL-TN3-R UTT6N10ZG-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package SOT-223 TO-252 Pin Assignment 123 GD S GD S Packing Tape Reel Tape Reel  MARKING SOT-223 www.unisonic.com.tw Copyright © 2017 Unisonic Technologies Co., Ltd TO-252 1 of 5 QW-R502-921.G UTT6N10Z Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 100 V Gate-Source Voltage Drain Current Continuous Pulsed Single Pulsed Avalanche Energy (Note 3) VGSS ID IDM EAS ±20 V 6A 24 A 12 mJ Peak Diode Recovery dv/dt (Note 5) dv/dt 4.2 V/ns Power Dissipation Junction Temperature TC=25°C TA=25°C SOT-223 TO-252 PD TJ 8W 1.25 W 150 °C Storage Temperature Range TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress r...