UTT40N08

UNISONIC TECHNOLOGIES CO., LTD UTT40N08 Preliminary 40A, 80V N-CHANNEL POWER MOSFET  DESCRIPTION The UTT40N08 power MOSFET provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness  FEATURES * RDS(ON) < 45mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified  SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT40N08L-TN3-R UTT40N08G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-252 Pin Assignment 123 GDS Packing Tape Reel  MARKING INFORMATION PACKAGE TO-252 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd MARKING 1 of 3 QW-R502-A81.a UTT40N08 Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 80 V Gate-Source Voltage VGSS ±20 V Drain Current Continuous Pulsed (Note 1) ID IDM 40 A 160 A Power Dissipation TC=25°C TC=125°C PD 65 1.92 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 62 1.92 UNIT °C/W ...