UT2035Z

UNISONIC TECHNOLOGIES CO., LTD UT2035Z -3.6A, -20V P-CHANNEL ENHANCEMENT MODE MOSFET  DESCRIPTION The UTC UT2035Z is a P-channel enhancement mode MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate charge, etc.  FEATURES *RDS(ON)<42mΩ @VGS=-4.5V, ID=-4.0A RDS(ON)<65mΩ @VGS=-2.5V, ID=-4.0A RDS(ON)<82mΩ @VGS=-1.8V, ID=-2.0A * High switching speed * Low gate charge * Low gate threshold voltage * Low input capacitance * Low input/output leakage  SYMBOL Power MOSFET 3 1 2 SOT-23 (EIAJ SC-59)  OR DERING INFORMATION Ordering Number UT2035ZG-AE3-R Note: Pin Assignment: S: Source G: Gate Package SOT-23 D: Drain Pin Assignment 123 SGD UT2035ZG-AE3-R (1)Packing Type (1) R: Tape Reel (2)Package Type (2) AE3: SOT-23 (3)Green Package (3) G: Halogen Free and Lead Free  MARKING Packing Tape Reel www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-937.C UT2035Z Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS VGSS -20 V ±8 V Drain Current Continuous (Note 2) Steady, TA=25°C State, TA=70°C ID -3.6 A -2.9 A Pulsed (Note 3) Power Dissipation (Note 2) IDM -24 A PD 0.81 W Junction Temperature Storage Temperature Range TJ TSTG -55~+150 -55~+150 °C °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be perm...