UNISONIC TECHNOLOGIES CO., LTD UF830-E
4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET
DESCRIPTION
The N-Channel enhancement...
UNISONIC TECHNOLOGIES CO., LTD UF830-E
4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET
DESCRIPTION
The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching
regulators, switching converters, solenoid, motor drivers, relay drivers.
FEATURES
* RDS(ON) < 1.5Ω@ VGS=10V, ID=2.5A * Single Pulse Avalanche Energy Rated * Rugged- SOA is Power Dissipation Limited * Fast Switching Speeds * Linear Transfer Characteristics * High Input Impedance
SYMBOL
1
Power MOSFET TO-220
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UF830L-TA3-T
UF830G-TA3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package TO-220
Pin Assignment 123 GDS
Packing Tube
MARKING
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1 of 8
QW-R502-993.B
UF830-E
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless Otherwise Specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage (TJ=25°C ~125°C)
VDS
500 V
Drain to Gate Voltage (RGS=20kΩ, TJ=25°C ~125°C)
VDGR
500 V
Gate to Source Voltage
VGS ±30 V
Drain Current
Continuous Pulsed
ID IDM
4.5 A 18 A
Power Dissipation (TC = 25°C)
PD 73 W
Single Pulse Avalanche Energy Rating (Note 2)
EAS
300 mJ
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are...