Document
UNISONIC TECHNOLOGIES CO., LTD
UF740-E
Power MOSFET
10A, 400V, 0.55Ω N-CHANNEL POWER MOSFET
DESCRIPTION
The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
FEATURES
* 10A, 400V, RDS(ON)(0.55Ω) * Single Pulse Avalanche Energy Rated * Rugged - SOA is Power Dissipation Limited * Fast Switching Speeds * Linear Transfer Characteristics * High Input Impedance
1 TO-220
1 TO-220F1
1
1 TO-220F
1 TO-220F2
TO-263
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UF740L-TA3-T
UF740G-TA3-T
UF740L-TF1-T
UF740G-TF1-T
UF740L-TF2-T
UF740G-TF2-T
UF740L-TF3-T
UF740G-TF3-T
UF740L-TQ2-T
UF740G-TQ2-T
UF740L-TQ2-R
UF740G-TQ2-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220 TO-220F1 TO-220F2 TO-220F
TO-263 TO-263
Pin Assignment 123 GDS GDS GDS GDS GDS GDS
Packing
Tube Tube Tube Tube Tube Tape Reel
www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-966. A
UF740-E
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless Otherwise Specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage (TJ =25°C~125°C) Drain to Gate Voltage (RGS = 20kΩ) (TJ =25°C~125°C)
VDS VDGR
400 V 400 V
Gate to Source Voltage
Continuous
VGS ID
±20 V 10 A
Drain Current
TC = 100°C Pulsed
ID IDM
6.3 A 40 A
Avalanche Energy
Single Pulsed (Note 3) TO-220/TO-263
EAS
520 mJ 125
Power Dissipation
TO-220F/TO-220F1
44 W
TO-220F2 TO-220/TO-263
PD
46 1.0
Derating above 25°C
TO-220F/TO-220F1
0.35 W/°C
TO-220F2
0.37
Junction Temperature
TJ
+150
°C
Operating Temperature Storage Temperature
TOPR TSTG
-55 ~ +150 -55 ~ +150
°C °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220/TO-263
Junction to Case
TO-220F/TO-220F1
TO-220F2
SYMBOL θJA
θJc
RATINGS 62.5 1.0 2.86 2.72
UNIT °C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-966. A
UF740-E
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°C, Unless Otherwise Specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Drain to Source Breakdown Voltage Gate to Threshold Voltage On-State Drain Current (Note 1)
Zero Gate Voltage Drain Current
Gate to Source Leakage Current Drain to Source On Resistance Forward Transconductance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain “Miller” Charge Input Capacitance Output Capacitance Reverse - Transfer Capacitance
Internal Drain Inductance
BVDSS VGS(THR)
ID(ON)
IDSS
IGSS RDS(ON)
gFS tDLY(ON)
tR tDLY(OFF)
tF
QG(TOT)
QGS QGD CISS COSS CRSS
LD
VGS = 0V, ID = 250μA VGS = VDS, ID = 250μA VDS >ID(ON) x RDS(ON)MAX, VGS =10V VDS = Rated BVDSS, VGS = 0V VDS=0.8 x Rated BVDSS, VGS=0V,TJ=125°C VGS = ±20V VGS = 10V, ID = 5.2A (Note 1) VDS ≥ 50V, ID = 5.2A (Note 1)
VDD = 200V, ID ≈ 10A, RGS = 9.1Ω, RL = 20Ω, VGS = 10V MOSFET Switching Times are Essentially Independent of Operating Temperature
VGS = 10V, ID = 10A, IG(REF) = 1.5mA, VDS = 0.8 x Rated BVDSS Gate Charge is Essentially Independent of Operating Temperature
VGS = 0V, VDS =25V, f = 1.0MHz
Measured From Modified MOSFET
the Contact Screw Symbol Showing the
on Tab to Center Internal Devices
of Die
Inductances
Measured From
the Drain Lead,
6mm (0.25in)
From Package to
Center of Die
400 2.0 10
5.8
4.0
25 250 ±500 0.47 0.55 8.9 45 55 65 75 150 180 70 85 100 120 10 20 1225 300 80
3.5
4.5
V V A μA μA nA Ω S ns ns ns ns
nC
nC nC pF pF pF
nH
nH
Internal Source Inductance
Measured From
the Source Lead,
LS
6mm (0.25in) From Header to
Source Bonding
Pad
7.5 nH
SOURCE TO DRAIN DIODE SPECIFICATIONS
Source to Drain Diode Voltage
VSD TJ = 25°C, ISD = 10A, VGS = 0V (Note 1)
Continuous Source to Drain Current
IS Modified MOSFET Symbol Showing
the Integral
Pulse Source to Drain Current (Note 2)
ISM
Reverse P-N Junction Diode
2.0 V 10 A
40 A
Reverse Recovery Time
trr TJ = 25°C, ISD = 10A, dISD/dt = 100A/μs
Reverse Recovery Charge
QRR TJ = 25°C, ISD = 10A, dISD/dt = 100A/μs
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty Cycle≤2%.
2. Repetitive rating: Pulse width limited by maximum junction temperature.
3. VDD=50V, starting TJ =25°C, L=9.1mH, RG=25Ω, peak IAS = 10A
170 390 790 ns 1.6 4.5 8.2 μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-966. A
UF740-E
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
RG VGS
RL
D.U.T.
VDD
Switching Time Test Circuit
VDS 90%
10% 0
VGS 010%
50% PULSE WIDTH
tD(ON) tR tON
90% 50%
tD(OFF) tF tOFF
Resistive Switching Waveforms
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QW-R502-966. A
UF740-E
TY.