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UF740-E Dataheets PDF



Part Number UF740-E
Manufacturers Unisonic Technologies
Logo Unisonic Technologies
Description N-CHANNEL POWER MOSFET
Datasheet UF740-E DatasheetUF740-E Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD UF740-E Power MOSFET 10A, 400V, 0.55Ω N-CHANNEL POWER MOSFET  DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.  FEATURES * 10A, 400V, RDS(ON)(0.55Ω) * Single Pulse Avalanche Energy Rated * Rugged - SOA is Power Dissipation Limited * Fast Switching Speeds * Linear Transfer Character.

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UNISONIC TECHNOLOGIES CO., LTD UF740-E Power MOSFET 10A, 400V, 0.55Ω N-CHANNEL POWER MOSFET  DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.  FEATURES * 10A, 400V, RDS(ON)(0.55Ω) * Single Pulse Avalanche Energy Rated * Rugged - SOA is Power Dissipation Limited * Fast Switching Speeds * Linear Transfer Characteristics * High Input Impedance 1 TO-220 1 TO-220F1 1 1 TO-220F 1 TO-220F2 TO-263  SYMBOL  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UF740L-TA3-T UF740G-TA3-T UF740L-TF1-T UF740G-TF1-T UF740L-TF2-T UF740G-TF2-T UF740L-TF3-T UF740G-TF3-T UF740L-TQ2-T UF740G-TQ2-T UF740L-TQ2-R UF740G-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F2 TO-220F TO-263 TO-263 Pin Assignment 123 GDS GDS GDS GDS GDS GDS Packing Tube Tube Tube Tube Tube Tape Reel www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-966. A UF740-E Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless Otherwise Specified) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage (TJ =25°C~125°C) Drain to Gate Voltage (RGS = 20kΩ) (TJ =25°C~125°C) VDS VDGR 400 V 400 V Gate to Source Voltage Continuous VGS ID ±20 V 10 A Drain Current TC = 100°C Pulsed ID IDM 6.3 A 40 A Avalanche Energy Single Pulsed (Note 3) TO-220/TO-263 EAS 520 mJ 125 Power Dissipation TO-220F/TO-220F1 44 W TO-220F2 TO-220/TO-263 PD 46 1.0 Derating above 25°C TO-220F/TO-220F1 0.35 W/°C TO-220F2 0.37 Junction Temperature TJ +150 °C Operating Temperature Storage Temperature TOPR TSTG -55 ~ +150 -55 ~ +150 °C °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  THERMAL DATA PARAMETER Junction to Ambient TO-220/TO-263 Junction to Case TO-220F/TO-220F1 TO-220F2 SYMBOL θJA θJc RATINGS 62.5 1.0 2.86 2.72 UNIT °C/W °C/W UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-966. A UF740-E Power MOSFET  ELECTRICAL CHARACTERISTICS (TC =25°C, Unless Otherwise Specified.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Drain to Source Breakdown Voltage Gate to Threshold Voltage On-State Drain Current (Note 1) Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance Forward Transconductance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain “Miller” Charge Input Capacitance Output Capacitance Reverse - Transfer Capacitance Internal Drain Inductance BVDSS VGS(THR) ID(ON) IDSS IGSS RDS(ON) gFS tDLY(ON) tR tDLY(OFF) tF QG(TOT) QGS QGD CISS COSS CRSS LD VGS = 0V, ID = 250μA VGS = VDS, ID = 250μA VDS >ID(ON) x RDS(ON)MAX, VGS =10V VDS = Rated BVDSS, VGS = 0V VDS=0.8 x Rated BVDSS, VGS=0V,TJ=125°C VGS = ±20V VGS = 10V, ID = 5.2A (Note 1) VDS ≥ 50V, ID = 5.2A (Note 1) VDD = 200V, ID ≈ 10A, RGS = 9.1Ω, RL = 20Ω, VGS = 10V MOSFET Switching Times are Essentially Independent of Operating Temperature VGS = 10V, ID = 10A, IG(REF) = 1.5mA, VDS = 0.8 x Rated BVDSS Gate Charge is Essentially Independent of Operating Temperature VGS = 0V, VDS =25V, f = 1.0MHz Measured From Modified MOSFET the Contact Screw Symbol Showing the on Tab to Center Internal Devices of Die Inductances Measured From the Drain Lead, 6mm (0.25in) From Package to Center of Die 400 2.0 10 5.8 4.0 25 250 ±500 0.47 0.55 8.9 45 55 65 75 150 180 70 85 100 120 10 20 1225 300 80 3.5 4.5 V V A μA μA nA Ω S ns ns ns ns nC nC nC pF pF pF nH nH Internal Source Inductance Measured From the Source Lead, LS 6mm (0.25in) From Header to Source Bonding Pad 7.5 nH SOURCE TO DRAIN DIODE SPECIFICATIONS Source to Drain Diode Voltage VSD TJ = 25°C, ISD = 10A, VGS = 0V (Note 1) Continuous Source to Drain Current IS Modified MOSFET Symbol Showing the Integral Pulse Source to Drain Current (Note 2) ISM Reverse P-N Junction Diode 2.0 V 10 A 40 A Reverse Recovery Time trr TJ = 25°C, ISD = 10A, dISD/dt = 100A/μs Reverse Recovery Charge QRR TJ = 25°C, ISD = 10A, dISD/dt = 100A/μs Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty Cycle≤2%. 2. Repetitive rating: Pulse width limited by maximum junction temperature. 3. VDD=50V, starting TJ =25°C, L=9.1mH, RG=25Ω, peak IAS = 10A 170 390 790 ns 1.6 4.5 8.2 μC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-966. A UF740-E  TEST CIRCUITS AND WAVEFORMS Power MOSFET RG VGS RL D.U.T. VDD Switching Time Test Circuit VDS 90% 10% 0 VGS 010% 50% PULSE WIDTH tD(ON) tR tON 90% 50% tD(OFF) tF tOFF Resistive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-966. A UF740-E  TY.


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